Chemical Vapor Deposition of Early Transition Metal and Metal Nitride Films

9632719汉普登-史密斯/科达斯U.新墨西哥州这个探索性研究的小额赠款是在化学部的特别项目办公室，以支持新墨西哥州大学的Mark Hampden-Smith博士和Toivo Kodas博士的合作研究。本研究的目标是为早期过渡金属和金属氮化物薄膜的化学气相沉积开发一种通用策略，主要用于微电子应用。 该方法的一般性将在可以形成的金属、金属合金以及二元和三元氮化物的范围内确定。一系列的还原剂将进行实验评估，热力学计算的帮助下。薄膜将在UHV条件下沉积，并通过SIMS分析纯度，SEM分析厚度和微观结构，XRD分析相鉴定，四点电阻率探针分析形态和纯度。 在温和条件下存款高纯度IV-VI族金属和金属氮化物的能力对于微电子应用具有巨大的潜在意义。这些材料目前用作集成电路中的粘附层和扩散阻挡层，并且通过高温方法（例如溅射或等离子体沉积）来沉积。低温沉积方法将提供不能通过热方法实现的纯度和保形性的膜。

9632719 Hampden-Smith/Kodas U. New Mexico This Small Grant for Exploratory Research is made in the Office of Special Projects of the Chemistry Division in support of the collaborative research of Drs. Mark Hampden-Smith and Toivo Kodas at the University of New Mexico. The goal of the research is the development of a general strategy for the Chemical Vapor Deposition of early transition metal and metal nitride films for largely microelectronic applications. The generality of the approach will be determined over a range of metals, metal alloys and binary and ternary nitrides which can be formed. A range of reductants will be evaluated experimentally, assisted by thermodynamic calculations. Films will be deposited under UHV conditions and analyzed by SIMS for purity, SEM for thickness and microstructure, XRD for phase identification and four point resistivity probe for morphology and purity. The ability to deposit high purity Group IV-VI metals and metal nitrides under mild conditions is of great potential significance for microelectronic applications. These materials are currently used as adhesion layers and diffusion barriers in integrated circuits and are deposited by high temperature methods such as sputtering or plasma deposition. A low temperature deposition method will provide films of purity and conformality which cannot be achieved by thermal methods.