Epitaxial Microstructures and Metallic Interfaces on Siliconand Silicon Germanium Alloys

本研究项目旨在对金属-半导体界面的基本理解取得重大进展，特别是在GeSi表面上肖特基势垒的形成方面，但也涉及诸如应变对势垒高度的影响等更广泛的问题。具体目标包括研究应变对势垒高度的影响，金属-硅-锗相形成的实验/理论结合研究，以及表面粗化对接触电阻的影响。一般的方法是结合先进的MBE和CVD生长方法以及原位表面表征技术与高分辨率TEM和其他非原位薄膜表征技术来探索模型三元界面的化学稳定性，研究应变和松弛SiGe合金界面上的Schottky势垒，探索形态粗糙的外延界面的材料和电学性能。并开展新的外延硅化物/硅纳米结构的研究。该项目是多学科结合基础材料物理和材料科学合成和加工研究与先进的表征工具和分析方法，以解决前沿问题，在一个具有强技术相关性和高潜在回报的主题领域。这项研究将为先进的电子/光子器件和集成电路的几个方面提供基础的材料科学知识。此外，从本研究项目中获得的知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而为提高先进设备和电路的性能做出贡献。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊

9633547 Nemanich This research project aims for significant advancement in fundamental understanding of metal-semiconductor interfaces, particularly with respect to formation of Schottky barriers on GeSi surfaces, but also with respect to broader issues such as the effect of strain on barrier height. Specific goals include investigation of the effect of strain on barrier height, combined experimental/theoretical investigations of Metal-Silicon-Germanium phase formation, and the effect of surface roughening on contact resistance. The general approach is to combine advanced MBE and CVD growth methods and in-situ surface characterization techniques with high resolution TEM and other ex-situ film characterization techniques to explore the chemical stability of model ternary interfaces, examine the Schottky barrier at the interface of strained and relaxed SiGe alloys, to explore materials and electrical properties of morphologically rough epitaxial interfaces, and to initiate new studies of epitaxial silicide/silicon nano-structures. %%% The project is multidisciplinary combining fundamental materials physics and materials science synthesis and processing studies with advanced characterization tools and analysis methods to address forefront issues in a topical area of strong technological relevance and high potential payoff. The research will contribute basic materials science knowledge at a fundamental level to several aspects of advanced electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***