MRI: Acquisition of a Commercial OMCVD System for Compound Semiconductor Material and Device Research
MRI: Acquisition of a Commercial OMCVD System for Compound Semiconductor Material and Device Research
批准号:
9724290
负责人:
Kei Lau
金额:
$40.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-10-01 至 2000-09-30
中文摘要
小行星9724290 马萨诸塞州/阿默斯特大学的电气和计算机工程系将购买一套商用有机金属化学气相沉积(OMCVD)系统,该系统将专门用于支持化合物半导体材料和器件的研究。 OMCVD系统将用于许多研究项目,特别包括: (1)共振隧穿注入激光器, (2)化合物半导体的OMCVD选区生长, (3)二维电子气介质在太赫兹探测器和外差接收器中的应用, (4)光泵太赫兹源/激光器, (5)量子阱太阳能电池, (6)III-V族半导体的OMVPE的替代来源。 收购OMCVD系统将使PI能够继续追求先进的器件概念,如共振隧穿注入激光器、2-DEG探测器和混频器阵列、THz源等。它还将使我们能够与那些对进一步开发更成熟的器件(如PHEMT)感兴趣的工业公司进行更密切的合作(赝晶高电子迁移率晶体管)和HBT(异质结双极晶体管)。 在新器件结构的开发、材料概念的测试和不同技术的兼容性方面,在该系统中生长的具有各种结构设计的器件晶片(全3”或4”)可以由公司放置在工艺线中进行比较。 该系统还将大大提高他对学生进行半导体培训的能力,特别是熟悉OMCVD。 总之,这台设备对我们的一些重大项目至关重要,并将为我们提供与工业研究人员合作的新机会,以及培训半导体,微波和光子行业nafionwide高需求的学生。 ***
英文摘要
9724290 Lau The Department of Electrical and Computer Engineering at the University of Massachusetts/Amherst will purchase a commercial organometallic chemical vapor deposition (OMCVD) system which will be dedicated to support research in compound semiconductor materials and devices. The OMCVD system will be used for many research projects, including in particular: (1) Resonant tunneling injection lasers, (2) Selective-Area Growth of Compound Semiconductors by OMCVD, (3) Application of the Two-Dimensional Electron Gas Medium to THz Detectors and Heterodyne Receivers, (4) Optically-Pumped THz Sources/lasers, (5) Quantum Well Solar Cells, (6) Alternate sources for OMVPE of Ill-V semiconductors. Acquisition of the OMCVD system will allow the PI to continue his pursuit of advanced device concepts such as resonant tunneling injection lasers, 2-DEG detector and mixer arrays, THz sources, etc. In addition, it will also allow us to work more closely with industrial companies who are interested in further development of more mature devices such as PHEMTs (pseudomorphic high-electron mobility transistors) and HBTs (Heterojuction Bipolar Transistors). In the development of new device structures, testing of material concepts, and compatibility of different technologies, device wafers (full 3" or 4") with various structural designs grown in this system can be placed in the process lines by the companies for comparison. This system will also greatly increase his capacity of training students in semiconductors in general and with familiarity of OMCVD specifically. In summary, this piece of equipment is essential to some of our major projects and will provide new opportunities for us to collaborate with industrial researchers, as well as training students who are in high demand by the semiconductor, microwave, and photonic industries nafionwide. ***
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GaN Growth by OMVPE Using Novel Nitrogen Sources
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批准号:9522082
-
项目类别:Continuing Grant
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资助金额:$30.56万
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财政年份:1995
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负责人:Kei Lau
-
依托单位:
RESEARCH EQUIPMENT GRANT: Fourier Transform Spectrometer for Compound Semiconductor Materials and Device Research
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批准号:9412015
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项目类别:Standard Grant
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资助金额:$7.0万
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财政年份:1994
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负责人:Kei Lau
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依托单位:
Faculty Awards for Women
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批准号:9023485
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项目类别:Continuing Grant
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资助金额:$25.0万
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财政年份:1991
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负责人:Kei Lau
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依托单位:
Engineering Research Grant: X-ray Diffractometer
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批准号:9009284
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项目类别:Standard Grant
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资助金额:$5.1万
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财政年份:1990
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负责人:Kei Lau
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依托单位:
Tensile Strain and Quantum Size Effects in III-V Semiconductor Material Systems
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批准号:8911995
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项目类别:Continuing Grant
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资助金额:$19.1万
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财政年份:1989
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负责人:Kei Lau
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依托单位:
Utilization of Oxygen Injection in OMCVD for III-V Electron c Materials (REU)
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批准号:8816235
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项目类别:Standard Grant
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资助金额:$3.0万
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财政年份:1988
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负责人:Kei Lau
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依托单位:
ROW: (Career) - Slow-Wave Characteristics of Modulation- Doped A1GaAs/GaAs Heterostructures
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批准号:8708259
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:1987
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负责人:Kei Lau
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依托单位:
Research Initiation: Selective Epitaxy of Gallium Arsenide By Organometallic Chemical Vapor Deposition
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批准号:8307396
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项目类别:Standard Grant
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资助金额:$5.4万
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财政年份:1983
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负责人:Kei Lau
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依托单位:
海外基金