Acquisition of an Electron Paramagnetic Resonance Spectrometer for Point Defect Studies of Semiconductors

这种电子顺磁共振（EPR）光谱仪将允许主要研究者识别和表征体和外延II-VI半导体中的器件限制点缺陷。EPR是一种灵敏、高分辨率的光谱技术，通过测量g矩阵和超精细参数来探测点缺陷的对称性和电子结构。可以用EPR研究的点缺陷的例子有受体、供体、空位、间隙、反位和过渡金属杂质。使用商用EPR光谱仪，在室温下，对于1高斯线宽，最小可检测的自旋数约为2 x 1010。通过将样品冷却到液氦温度，灵敏度进一步提高。这种监测小浓度点缺陷的能力使EPR成为开发下一代半导体器件的研究项目中使用的绝佳工具。% % % * * *

9802899 Giles This electron paramagnetic resonance (EPR) spectrometer will allow the principal investigator to identify and characterize device-limiting point defects in bulk and epitaxial II-VI semiconductors. EPR is a sensitive, high resolution spectroscopic technique which is used to probe the symmetry and electronic structure of point defects through measurement of the g matrix and hyperfine parameters. Examples of point defects which can be studied by EPR are acceptors, donors, vacancies, interstitials, antisites, and transition-metal impurities. Using a commercial EPR spectrometer, the minimum detectable number of spins is approximately 2 x 1010 at room temperature for a 1 gauss linewidth. The sensitivity is further improved by cooling the sample to liquid helium temperatures. This ability to monitor small concentrations of point defects makes EPR an excellent tool for use in research programs that are developing the next generation of semiconductor devices. %%% ***