Chemical Sensors for CVD Processing
Chemical Sensors for CVD Processing
批准号:
9810176
负责人:
Thomas Kuech
金额:
$31.33万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-08-15 至 2002-07-31
中文摘要
摘要 提案标题: CVD工艺用化学传感器提案编号: CTS-9810176主要研究者:亚瑟B。Ellis和托马斯F. Kuech机构: 联合威斯康星州-麦迪逊 拟议的研究目标是实现更好的物理化学的理解之间的界面掺杂II-VI和III-V族半导体表面和化学吸附气体的III-VI族化合物半导体前体。先前的工作表明,通过适当的表面钝化或修饰,可以使半导体光致发光对吸附物或多或少地敏感和选择性。这项工作将产生一个描述的表面键合和费米能级的衬底暴露后的GaAs的SeS2,和结构变化的CdSe的silapentanes吸附后。使用的技术包括光反射光谱法、检测费米能级变化的同步加速器红外吸收和扫描探针显微镜。表面改性将与金属卟啉膜,双功能分子,如苯二胺和树枝状聚合物,也通过分子印迹聚合周围的分析物分子。 通过MOCVD产生的异质结构将由GaAs顶部的ZnSe和GaSb顶部的CdSe组成。掩埋界面的特征在于从光致发光响应。实际的传感器将被测试的金属有机气相外延过程中吸附的气体。化学-化学工程合作对这项工作的研究和教育影响都有很大的影响。这些基本结果的直接适用性CVD气体检测可以扩展到检测危险气体,爆炸物和食品质量。
英文摘要
ABSTRACT Proposal Title: Chemical Sensors for CVD Processing Proposal Number: CTS-9810176 Principal Investigator: Arthur B. Ellis and Thomas F. Kuech Institution: U. Wisconsin - Madison The proposed research objective is to attain better physicochemical understanding of the interfaces between doped II-VI and III-V semiconductor surfaces and chemisorbed gases of III-VI compound semiconductor precursors. Prior work demonstrated that the semiconductor photoluminescence can be made more or less sensitive and selective with respect to adsorbate by appropriate surface passivation or modification. This work will produce a description of surface bonding and Fermi level of the substrate upon exposure of GaAs to SeS2, and structural changes of CdSe upon adsorption of silapentanes. Techniques to be used include photoreflectance spectroscopy, synchrotron IR absorption to detect Fermi level changes, and scanning probe microscopy. Surface modification will be performed with metalloporphyrin films, bifunctional molecules like phenylenediamine and dendrimers, and also by molecular imprinting by polymerization around analyte molecules. Heterostructures produced by MO-CVD will consist of ZnSe atop GaAs and CdSe atop GaSb. The buried interfaces will characterized from the photoluminescence response. Practical sensors will be tested for the gases adsorbed during the metallo-organic vapor phase epitaxy process. The Chemistry-Chemical Engineering collaboration has a strong influence both on the research and the educational impacts of this work. The immediate applicability of these fundamental results to CVD gas detection can be extended to the detection of hazardous gases, explosives, and food quality.
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New Chemical Pathways to the Growth of Complex Oxide Films for Nonlinear Photonics
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批准号:0505775
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Thomas Kuech
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依托单位:
XYZ on a Chip: Compact and Integrated Chemical Sensors for Aqueous Analytes Based on Surface Modifaction of Semiconductors
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批准号:9980758
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项目类别:Continuing Grant
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资助金额:$52.0万
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财政年份:1999
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负责人:Thomas Kuech
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依托单位:
Materials Research Science and Engineering Center on Nanostructured Materials and Interface
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批准号:9632527
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项目类别:Cooperative Agreement
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资助金额:$917.0万
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财政年份:1996
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负责人:Thomas Kuech
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依托单位:
Experimental and Modeling Studies of Impurities at Metal/ Organic Vapor Phase Epitaxy-Grown Interfaces
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批准号:9414334
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项目类别:Continuing Grant
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资助金额:$46.66万
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财政年份:1994
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负责人:Thomas Kuech
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依托单位:
Experimental and Modeling Studies of the MOVPE (MetalorganicVapor Phase Epitaxy) Process
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批准号:9106633
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项目类别:Continuing Grant
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资助金额:$41.02万
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财政年份:1991
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负责人:Thomas Kuech
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依托单位:
海外基金