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SBIR Phase I: Development of Transparent Diodes

SBIR Phase I: Development of Transparent Diodes
SBIR 第一阶段:透明二极管的开发
批准号:
9860239
负责人:
Gary Tompa
金额:
$10.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1999
资助国家:
美国
项目状态:
已结题
起止时间:
1999-01-01 至 1999-06-30

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中文摘要
翻译
9860239结构材料工业公司的这个第一阶段小型企业创新研究第一阶段项目将展示该公司可以制造透明二极管(p型氧化锌二极管,PE-MOCVD)的原则证明。日本研究人员最近宣布,他们成功地制备出了室温下掺氮的p型氧化锌透明导电薄膜。到目前为止,透明(宽禁带)导电氧化物几乎都是n型。我们已经非常成功地生产了各种n型高导电性材料。高发光和近外延的氧化锌基薄膜。如果稳定的p型透明氧化物可以重复和经济地复制,那么各种新的和增强的、完全透明的器件应用就变得可用了。应用包括:二极管、晶体管、光伏、传感器、p型半导体接触层、LED、OLED等设备。基于我们的能力,我们在研究和开发p型氧化锌薄膜和器件方面处于有利地位。在第一阶段,我们建议进行快速原理证明的p型氧化锌材料的沉积和表征研究,并首次展示了透明氧化物固态p-n结二极管。将对薄膜和二极管进行表征,并发展材料和器件理论。在第二阶段,SMI将专注于精炼材料和工艺,并生产可商业化的透明p-n二极管器件。宽禁带p型透明导电氧化物的开发,与我们现有的n型透明导电氧化物相结合,可以扩大和产生几个市场,包括二极管的市场。晶体管,全透明显示器。UV/蓝色发射器和探测器等。市场领先地位将来自于材料能力。
英文摘要
9860239 This Phase I Small Business Innovation Research Phase I project from Structured Materials Industries Inc., will show proof-of-principle that the firm can make transparent Diodes (p-type ZnO by, PE-MOCVD). Japanese researchres recently announced that they had succeeded in forming nitrogen doped room temperature p-type ZnO transparent and conductive thin films. Heretofore, transparent (wide bandgap) conductive oxides have almost exclusively been n-type. We have been highly successful in producing a variety of n-type highly conductive. highly luminescent and near epitaxial ZnO based films. If stable p-type transparent oxides can be repeatedly and economically reproduced then a great variety of new and enhanced ,wholly transparent device applications become available. Applications include: diodes, transistors, photovoltaics, sensors, p-type semiconductor contact layers, LEDs, OLEDs, among other devices. Based upon our capabilities, we are strongly positioned to investigate and develop p-type ZnO based films and devices. We propose, in Phase I, to perform a rapid proof-of-principle p-type ZnO materials deposition and characterization study, and for the first time, demonstrate a transparent oxide solid state p-n junction diode. The films and diodes will be characterized and material and device theory will be developed. In Phase II. SMI will focus on refining materials and processes and produce commercializable transparent p-n diode devices. Development of wide bandgap p-type transparent conductive oxides, combined with our existing n-type transparent conductive oxides could expand and generate several markets, including those of diode. transistors, wholly transparent displays. UV/blue emitters and detectors, and so on. Market leadership will result from materials capabilities.
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国内基金
海外基金
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