Developing Organic Synthetic Approaches to Electronic Interface Formation

这个多学科的研究项目，这是由分析和表面化学在化学部，固态化学在材料研究部，和多学科活动办公室的共同支持，涉及有机半导体接口。 利用有机合成化学的成熟方法，主要是狄尔斯-阿尔德和相关化学，本特教授和她在斯坦福大学的同事正在形成有机半导体界面。 在Si（100）或Ge（100）表面上锚定活性物质之后，进行有机界面的蚀刻。 这项工作探讨了这种化学反应的机制，并考虑使用光刻方法将这些想法扩展到有机电子器件的构建。 这些有机-半导体杂化材料在下一代电子和光电子器件中显示出巨大的应用前景。随着最先进的有机基电子器件的构思和实现，有机薄膜和半导体衬底之间的界面变得越来越重要。 该研究项目的重点是了解这个重要界面的化学性质。 斯坦福大学的Bent教授和她的同事们正在开发这种基于众所周知的双键活化方法的化学，并正在使用这种方法为这一代有前途的新电子器件开发更强大的处理方法。

This multidisciplinary research project, which is supported jointly by Analytical and Surface Chemistry in the Chemistry Division, Solid State Chemistry in the Division of Materials Research, and the Office of Multidisciplinary Activities, concerns the organic-semiconductor interface. Using well-established methods of synthetic organic chemistry, primarily Diels-Alder and related chemistry, Professor Bent and her colleagues at Stanford University are fashioning organic-semiconductor interfaces. Elaboration of the organic interface is carried out, following the anchoring of reactive species on the Si(100) or Ge(100) surface. The work explores the mechanism of this chemistry, and considers the use of lithographic methods to extend these ideas to the construction of organic based electronic devices. These hybrid organic-semiconductor materials show great promise for application in the next generation of electronic and optoelectronic devices.The interface between organic thin films and semiconductor substrates is becoming more and more important as state of the art organic based electronic devices are conceived and implemented. This research project focuses on understanding the chemistry of this important interface. Professor Bent and her coworkers at Stanford University are developing this chemistry based on well-known methods of double bond activation, and are using this approach to develop more robust processing methods for this promising generation of new electronic devices.