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Metal Boride Thin Films: Synthesis of CVD Precursors and Growth by Remote-Plasma CVD

Metal Boride Thin Films: Synthesis of CVD Precursors and Growth by Remote-Plasma CVD
金属硼化物薄膜:CVD 前体的合成和远程等离子体 CVD 生长
批准号:
0076061
负责人:
Gregory Girolami
金额:
$52.1万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-08-01 至 2004-07-31

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项目成果

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中文摘要
翻译
该奖项由化学部的先进材料和加工计划以及材料研究部的电子材料计划颁发,以支持伊利诺伊大学厄巴纳-香槟分校的Gregory Girolami教授和John Abelson教授的工作。研究的重点是利用远程氢等离子体辅助化学气相沉积的方法合成过渡金属和镧系元素的硼氢化物络合物,并从它们沉积薄膜。研究了薄膜沉积的效率和机理,以及所制备的薄膜的物理性能。这些研究将为微电子集成电路中作为扩散阻挡层的金属硼化物的体扩散特性和限制提供科学信息。此外,这项研究还在材料科学的一个重要交叉学科领域为学生提供培训。纯金属硼氢化物正在合成和表征,它只包含金属、硼和氢。用于集成电路的薄膜作为阻挡层材料正在用气相沉积方法制备。此外,该项目的跨学科方法为学生提供了材料化学、合成、表征和薄膜沉积方面的知识和培训。从这些研究中获得的知识将在电子和光子器件集成电路的设计和制造中得到应用。
英文摘要
This award by the Advanced Materials and Processing Program in the Chemistry Division and the Electronic Materials Program in the Division of Materials Research supports the work of Professors Gregory Girolami and John Abelson of the University of Illinois Urbana-Champaign. The focus of the research is the synthesis of transition metal and lanthanide borohydride complexes and deposition of thin films from them using remote hydrogen-plasma-assisted chemical vapor deposition. The efficiency and mechanism of thin layer deposition and physical properties of the films prepared are being investigated. These studies will provide scientific information on bulk diffusion properties and limits of metal borides as diffusion barriers in microelectronic integrated circuits. In addition, the research provides training to students in an important interdisciplinary area of materials science.Pure metal borohydrides, which contain only the metal, boron, and hydrogen, are being synthesized and characterized. Thin films for applications in integrated electronic circuits as barrier materials are being prepared by vapor deposition methods. In addition, the interdisciplinary approaches of this project provide knowledge and training to students in materials chemistry, synthesis, characterization, and thin film deposition. The knowledge gained from these studies will have applications in the design and fabrication of integrated circuits for electronic and photonic devices.
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Exploratory Synthesis and Reactivity of Volatile Transition Metal Complexes and Use as Molecular Precursors
Exploratory Synthesis and Reactivity of Volatile Transition Metal Complexes and Use as Molecular Precursors
Exploratory Synthesis and Reactivity of Volatile Transition Metal Complexes and Use as Molecular Precursors
Volatile Transition Metal Compounds with New Ligand Archetypes: Exploratory Synthesis, Small Molecule Reactivity, and Use as Molecular Precursors
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