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Synthesis of New Molecular Precursors and Development of Surface Catalysts and Inhibitors for the Chemical Vapor Deposition of Thin Films

Synthesis of New Molecular Precursors and Development of Surface Catalysts and Inhibitors for the Chemical Vapor Deposition of Thin Films
薄膜化学气相沉积新型分子前体的合成及表面催化剂和抑制剂的开发
批准号:
0750422
负责人:
Gregory Girolami
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-08-01 至 2011-07-31

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中文摘要
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英文摘要
This research award in the Inorganic, Bioinorganic and Organometallic Chemistry program supports work by Professor Gregory S. Girolami at the University of Illinois at Urbana-Champaign to develop new and better-performing materials and new fabrication methods that will enable the continued miniaturization of integrated circuits. This research involves the synthesis and characterization of new transition metal compounds that could serve as precursors for the low-temperature growth of thin films, and the use of these compounds to deposit thin films. A particular focus is on the chemistry of compounds that contain both transition metals and boron, which could serve as precursors to grow films of transition metal borides, which are highly electrically conductive but extremely chemically inert. The chemistry and mechanisms of film formation will be studied in order to obtain a better understanding of the deposition chemistry and to guide the development of better methods. Both graduate and undergraduate students will participate in the research, and receive advanced training and mentoring that will enable them to contribute to the solution of key national needs.This project addresses critical problems in the microelectronics industry. Potential outcomes of the work are the development of methods and materials for barriers that would prevent undesired reactions between copper and silicon, which are two key components of integrated circuits, and the development of improved methods to deposit uniformly-thick films in deep recesses with aspect ratios of greater than 10:1, so that key circuit components such as interconnects and dynamic random access memory (DRAM) capacitors can be made on a smaller scale.
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Exploratory Synthesis and Reactivity of Volatile Transition Metal Complexes and Use as Molecular Precursors
Exploratory Synthesis and Reactivity of Volatile Transition Metal Complexes and Use as Molecular Precursors
Exploratory Synthesis and Reactivity of Volatile Transition Metal Complexes and Use as Molecular Precursors
Volatile Transition Metal Compounds with New Ligand Archetypes: Exploratory Synthesis, Small Molecule Reactivity, and Use as Molecular Precursors
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