Synthesis of New Molecular Precursors and Development of Surface Catalysts and Inhibitors for the Chemical Vapor Deposition of Thin Films

薄膜化学气相沉积新型分子前体的合成及表面催化剂和抑制剂的开发

• 批准号: 0750422
• 负责人: Gregory Girolami
• 金额: --
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-08-01 至 2011-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0750422&HistoricalAwards=false
• 关键词: Synthesis; New; Molecular; Precursors; Development

This research award in the Inorganic, Bioinorganic and Organometallic Chemistry program supports work by Professor Gregory S. Girolami at the University of Illinois at Urbana-Champaign to develop new and better-performing materials and new fabrication methods that will enable the continued miniaturization of integrated circuits. This research involves the synthesis and characterization of new transition metal compounds that could serve as precursors for the low-temperature growth of thin films, and the use of these compounds to deposit thin films. A particular focus is on the chemistry of compounds that contain both transition metals and boron, which could serve as precursors to grow films of transition metal borides, which are highly electrically conductive but extremely chemically inert. The chemistry and mechanisms of film formation will be studied in order to obtain a better understanding of the deposition chemistry and to guide the development of better methods. Both graduate and undergraduate students will participate in the research, and receive advanced training and mentoring that will enable them to contribute to the solution of key national needs.This project addresses critical problems in the microelectronics industry. Potential outcomes of the work are the development of methods and materials for barriers that would prevent undesired reactions between copper and silicon, which are two key components of integrated circuits, and the development of improved methods to deposit uniformly-thick films in deep recesses with aspect ratios of greater than 10:1, so that key circuit components such as interconnects and dynamic random access memory (DRAM) capacitors can be made on a smaller scale.

这个无机、生物无机和有机金属化学项目的研究奖支持伊利诺伊大学厄巴纳-香槟分校的Gregory S. Girolami教授开发新的、性能更好的材料和新的制造方法，这将使集成电路的持续小型化。本研究涉及到新的过渡金属化合物的合成和表征，这些化合物可以作为低温生长薄膜的前体，并使用这些化合物沉积薄膜。特别关注的是含有过渡金属和硼的化合物的化学性质，它们可以作为过渡金属硼化物薄膜的前体，这种薄膜具有高导电性，但化学惰性极强。为了更好地理解沉积化学和指导更好的方法的发展，将研究薄膜形成的化学和机制。研究生和本科生都将参与研究，并接受高级培训和指导，使他们能够为解决国家关键需求做出贡献。该项目解决微电子工业中的关键问题。这项工作的潜在成果是开发出防止铜和硅（集成电路的两个关键组件）之间发生不良反应的屏障方法和材料，以及开发出在宽高比大于10:1的深凹槽中沉积均匀厚膜的改进方法，从而可以在更小的规模上制造互连和动态随机存取存储器（DRAM）电容器等关键电路组件。