SBIR Phase I: Stable High Volume Cu Precursor Evaporation Module

这个小型企业创新研究（SBIR）第一阶段项目将致力于开发一种先进的前驱体蒸发模块，具体应用于铜金属化。铜种子层需要快速大面积的化学气相沉积，或者最好是沉积完整的接触层。CVD设备制造商对沉积工具的需求做出了回应；铜前体的开发人员也在努力实现Cu CVD。然而，所选择的铜前驱体Cupra Select TM（一种液体），由于其蒸气压低，并且温度工作范围窄（43℃时蒸气压为0.4 Torr，超过~ 45℃时该前驱体开始分解），因此其蒸汽输送率相对较低。由于分解温度低，闪蒸不是一种解决办法。有限的蒸汽输送阻碍了高速大面积生长。这导致了多步骤多机器铜金属化工艺的发展（CVD种子层，然后是整个层的电化学沉积）。这是可以容忍的，但效率极低，因此成本很高。SMI建议创建可申请专利的大容量液体汽化源。我们提出的来源提供了至少5倍的可用Cu蒸气传输，并有望允许CVD取代目前的两步工艺。如果开发成功，SMI的源代码将用于商业。这项工作将有助于加速铜互连ic的大规模制造，并可应用于任何其他利用低挥发性液体前体的CVD工艺。一种改进的液体汽化源将立即用于所有Cu CVD系统，因此是一种战略性SMI组件产品。该装置还将应用于类似的温度敏感，低挥发性液体，并很好地满足SMI CVD组件的销售需求。

This Small Business Innovation Research (SBIR) Phase I project will address development of an advanced precursor evaporation module with a specific focus application to copper metalization. Rapid large area CVD is required for the copper seed layer or, preferably, for deposition of the full contact layer. CVD equipment manufacturers have responded to the deposition tool need; as have developers of the copper precursors to enable Cu CVD. However, the copper precursor of choice, Cupra Select TM (a liquid), has a relatively low vapor transport rate because of its low vapor pressure, compounded by a narrow temperature operating range (vapor pressure equals 0.4 Torr at 43 C and beyond ~ 45 C this precursor begins to decompose). Flash Evaporation is not a solution because of the low decomposition temperature. The limited vapor transport hinders high speed large area growth. This has led to the development of a multistep-multimachine copper metalization process (CVD seed layer followed by electrochemical deposition of the whole layer). This is tolerable but highly inefficient and hence costly. SMI proposes to create a patentable high volume liquid vaporization source. Our proposed source offers at minimum a 5 fold increase in available Cu vapor transport and is expected to allow CVD to replace the present two-step process. If successfully developed, SMI's source will be made available commercially. This effort will help accelerate the large scale manufacturing of ICs with Cu interconnects, and may apply to any other CVD process utilizing low volatility liquid precursors. An improved liquid vaporization source will find immediate use on all Cu CVD systems and hence be a strategic SMI component product. The unit will also find applications to similar temperature sensitive, low volatility liquids and well meets SMI's CVD components sales thrusts.