Passivation of Silicon Dangling Bonds by Deuterium Implantation

该项目将通过离子注入引入氘来避免扩散退火法。例如，在MOS晶体管中，在生长薄栅氧化物之前，会在硅衬底上注入重氢。为了实现这一目标，我们将研究(1)重离子注入能量和剂量对氧化物生长及其界面的影响。适当的剂量可以减少衬底损伤或消除位错环的产生，同时满足悬挂键，即使在随后的氧化物生长热循环之后也是如此。通过研究离子注入后氚的分布，将优化热预算，以控制物理结合和随后的电学特性。(2)其次，研究了界面放氢的热动力学，并对其对成品器件电学特性的影响进行了评价。(3)研究了在Si/SiO_2系统中由于氧化物生长而导致的氢扩散机制。该提案的重点是进行一项通过离子注入有效地掺入氘的实验研究。将开展这一过程与其他界面钝化方法的比较研究，如各种退火处理、在部分完成的器件上注入氘(TI方法)和氢离子注入。此外，我们还将在用于光电子学应用的硅纳米晶体中加入离子注入的氘。尽管这项研究的主要焦点将是Si/SiO_2界面，但还有一项任务将研究砷化镓器件，以研究光电子器件中的氢离子注入行为。将采用广泛的物理和电学表征。亚微米MOSFET将被用来实现对超薄二氧化硅/硅界面上注入的氢的行为的基本了解，目前对这一行为的理解很差。测试设备将在NJIT的微制造中心在研究生和本科生的帮助下进行。由于NJIT有相当多的少数民族学生和女性学生(分别为40%和18%)，预计其中一些学生将有机会为该项目做出贡献。最近收购的最先进的设备表征系统(支持NSF)将用于NJIT的电气表征，而一些物理表征将在Agere实验室(前身为朗讯技术)进行。砷化镓样品将由Anadigics制作。氢注入将在NJIT和离子注入公司(IICO)进行。这项尖端技术在全国的高度重要性，以及NJIT合格的教职员工和学生以及Agere实验室和Anadigics的研究人员的密切参与，将对推进这一领域的知识库产生重大影响。

This project will obviate the diffusion annealing by introducing deuterium through ion implantation. In MOS transistors, for example, deuterium will be implanted on silicon substrate before the thin gate oxide was grown. To achieve the objective, we will investigate (1) effect of deuterium implantation energy and dose on oxide growth and its interface. An appropriate dose can reduce substrate damage or eliminate creation of dislocation loops while satisfy the dangling bonds even after the subsequent thermal cycles of oxide growth. Thermal budgets will be optimized to control the physical incorporation and subsequent electrical characteristics by studying the distribution of deuterium after ion implantation. (2) Secondly, thermal kinetics of deuterium desorption from the interface will be studied and its effect on electrical characteristics of finished device will be evaluated. (3) Thirdly, the mechanisms of deuterium diffusion in Si/Si02 system due to oxide growth will be investigated. The focus of the proposal is to conduct an experimental investigation of incorporating deuterium effectively through ion implantation. Tasks will be undertaken for a comparative study of this process to other means of interface passivation such as various annealing treatments, deuterium implantation at a partially completed device (TI approach) and hydrogen implantation. In addition, we will incorporate deuterium using ion implantation in silicon nanocrystals used for optoelectronics applications. Even though the main focus of this research will be towards Si/Si02 interface, an additional task will study GaAs devices to investigate behavior of deuterium implantation in optoelectronic devices. Extensive physical and electrical characterization will be employed. Sub-micron MOSFETs will be used to achieve a fundamental understanding of the behavior of implanted deuterium at the ultra-thin silicon-dioxide/silicon interface, which is, at present, poorly understood.Test devices will be processed at the Microfabrication Center at NJIT with the help of graduate and undergraduate students. Since NJIT has a significant presence of minority and women students (~40% and ~18% respectively) it is expected that some of these students will have the opportunity to contribute to this project. A recently acquired state-of-the-art device characterization system (NSF supported) will be used for electrical characterization at NJIT whereas some of the physical characterization will be carried out at Agere Labs formerly Lucent Technologies. GaAs samples will be prepared by Anadigics. Deuterium implantation will be carried out at NJIT and at Ion Implantation Company (IICO). The high national importance of this cutting edge technology and close involvement of qualified staff and students at NJIT and researchers at Agere Labs and Anadigics will significantly impact on advancing knowledge base in this area.