GOALI: RF Performance of Si-Based RITD for Mixed-Signal Applications

03236557 berger带结构工程使异质结构丰富的电子和光学特性成为可能，这推动了开发先进半导体器件和电路的动力。由于隧道二极管的负差分电阻（NDR）的独特特性，隧道二极管可以与晶体管集成，形成新型的量子非线性功能器件和电路。这种集成电路在电路速度、减少元件数量和降低功耗方面表现出更高的性能。在摩托罗拉实验室等地方，以前集成td的电路工作仅限于III-V型化合物半导体。然而，直到最近，将其转化为低成本和高产量的Si世界是不切实际的。但PI和其他研究人员最近开发的基于硅的TD技术正在挑战这一障碍。本提案的目的之一是通过将基于iii - v的TD电路技术转移到Si中，寻求将基于Si的谐振带间隧道二极管（RITD）与Si/SiGe晶体管集成的方法，以应对无线通信中的挑战。PI试图利用他的实验室最近在基于si的ritd上取得的直流性能里程碑，即室温下的峰谷电流比（PVCR）高达3.8或峰值电流密度Jp超过150 kA/ cm2。该项目旨在提高硅无线能力，最终可能导致在单个硅芯片上的整个无线电或其他有趣的数字和模拟电路的融合。此外，隧道二极管已被证明具有很强的抗辐射能力，并在1960年代的一些第一批通信卫星上广泛使用，从而使它们也被引入军事和非地面应用。与摩托罗拉实验室以“学术界与工业界联络资助机会”（GOALI）的形式合作，证明了工业界在接受这一技术途径之前，对进一步探索这一技术途径的兴趣和好奇心。摩托罗拉愿意分享他们的电路和系统经验，以及应用他们对这些非线性Si/SiGe td的内部模拟建模。这个项目将提供一个环境，让学生在更广阔的研究过程中得到训练，从器件物理、材料和器件加工到器件和电路测试和建模。在这个项目中，研究生和本科生不仅可以与pi进行自然的交流和监督，还可以与政府和行业研究实验室的科学家进行密切的互动，这将有助于他们获得知识，并提供初步的研究经验，从而在未来的职业生涯中促进团队合作的概念。在俄亥俄州立大学（伯杰），本科生研究预计将在拟议的研究中发挥很大的作用。已经开始与EE荣誉项目代表和PI进行讨论，以便在2003年秋季集体提交REU网站。取而代之的是，PI将提交REU补充请求以及REU站点请求。PI通过REU补充使用本科研究人员有着悠久的历史。招募代表性不足的人一直是、也将是pi研究项目的一个方面。该项目的技术优点在于它对以下方面的影响：(i)由于缩短路径长度和增加功能而提高电路速度，（ii）减少组件数量（每单位面积的计算能力更强），（iii）降低功耗（每个逻辑功能的组件更少），（iv）使用晶体管上方/下方的隧道二极管的3-D集成来压缩布局，以及(v)扩展射频无线技术。

0323657BergerThe drive to develop advanced semiconductor devices and circuits is fueled bythe wealth of electronic and optical properties of heterostructures made possible by band structure engineering. Tunnel diodes (TD) can be integrated with transistors to create novel quantum nonlinear functional devices and circuits due to the unique property of a tunnel diode's negative differential resistance (NDR). Such integrated circuits have demonstrated enhanced performances in circuit speed, reduce component count and lower power consumption. Previous circuit work incorporating TDs, at places like Motorola Laboratories, has been limited to III-V compound semiconductors only. However, until recently, it was not practical to translate this to the low-cost and high production volume Si world. But recent developments in Si-based TD technology by the PI and other researchers are challenging this roadblock. One aim of this proposal is to seek ways to integrate Si-based resonant interband tunnel diodes (RITD) with Si/SiGe transistors to meet the challenges in the wireless communications by transferringthis III-V-based TD circuit technology to Si. The PI seeks to capitalize upon recent DC performance milestones achieved within his laboratory on Si-based RITDs, namely peak-to-valley current ratio (PVCR) up to 3.8 at room temperature or peak current densities Jp exceeding 150 kA/cm 2 .This project aims to boost Si wireless capabilities that could eventually lead to anentire radio on a single Si chip or other interesting fusions of digital and analog circuits. Further, tunnel diodes have been shown to be very radiation hard and were used extensively in some of the first communication satellites in the 1960's, thus lending their introduction into military and non-terrestrial applications as well. Partnering with Motorola Laboratories in the form of a Grant Opportunities of Academia in Liaison with Industry (GOALI) is testimony to the level of interest and curiosity of industry to explore this technological pathway further, before embracing it. Motorola is willing to share their circuit and system experience as well as apply their in-house analog modeling of these nonlinear Si/SiGe TDs.This project will provide an environment where students can be trained in a broaderperspective of the research process, from device physics, material and device processing, to device and circuit testing and modeling. Collaborative efforts required in this project will allow graduate and undergraduate students not only to have natural exchange and supervision with PIs, but also to have strong interactions with scientists in government and industry research laboratories, which will facilitate their acquisition of knowledge and provide an initial research experience that promotes the notion of teaming in their future careers. At Ohio State (Berger), undergraduate research is expected to play a large component in the proposed research. Discussions have already commenced with the EE Honors Program representative and the PI to ramp up towards a collective REU Site submission in Fall 2003. In lieu of this, the PI will submit requests for REU supplements as well as the REU Site request. The PI has a long and established history of using undergraduate researchers through REU supplements. Recruitment of underrepresented peoples has been and will be a facet in the PIs research projects.The technical merits of this project derive from its impact on (i) increase circuit speeddue to shortened path lengths and increased functionality, (ii) reduce component count (more computational power per unit area), (iii) lower power consumption (fewer components per logic function), (iv) compact the layout using 3-D integration of tunnel diodes above/below transistors, and (v) extend RF wireless technology.