GOALI: Atomic-scale Investigation of High Dielectric Constant Thin Films Using In Situ and Other Techniques
GOALI: Atomic-scale Investigation of High Dielectric Constant Thin Films Using In Situ and Other Techniques
批准号:
0329195
负责人:
Christos Takoudis
金额:
$30.29万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-01-01 至 2007-09-30
中文摘要
这个GOALI项目包括未来几代纳米电子技术所需的薄膜结构的原子水平研究。最初的重点将放在硅上的氧化铪上,后来扩展到技术上更有趣的系统,如氮化物阻挡层上的硅酸铪。该项目将涉及研究生在学术和工业(液化空气(AL))环境中工作,以建立生长条件之间的关系,含铌前体纯度,反应流体的瞬态输送方法,高介电常数结构/Si(100)界面的原子尺度结构特性,以及高温后处理/结构/功能关系。在生长过程中的气相组成是用独特的实时气相检测监测。薄膜的性质,结构和功能将与互补的技术,如原子尺度分辨率扫描透射电子显微镜/电子能量损失谱,红外光谱与单层灵敏度,X射线衍射和电学特性进行研究。 通过详细的物理化学模型,研究高温后沉积过程中相邻元素之间的氧化和硅化所产生的固态扩散反应问题,预计该项目将对微电子和纳米电子技术以及人力资源开发产生广泛影响。参与的学生,研究生和本科生,将从事不同的原子尺度的方法来生长和表征表面和界面纳米结构。研究生将定期向AL研究人员展示他们的工作,他们还将在工业环境中提供沟通和以项目为导向的研究管理风格的经验。伊利诺伊大学芝加哥分校在为包括许多女性和代表性不足的少数民族在内的多样化学生提供优秀的教育经验方面有着良好的记录。 在芝加哥校区还设立了一个面向本科生的NSF研究经验网站,重点是“新材料和加工”。
英文摘要
This GOALI project includes atomic level studies of thin film structures needed for future generations of nano-electronics technology. The initial focus will be on hafnium oxide on silicon, later extending to more technologically interesting systems such as hafnium silicates on nitride barriers. This project will involve graduate students working in an academic and industrial (Air Liquide (AL)) setting to establish the relationships among growth conditions, hafnium-containing precursor purity, method of transient delivery of reactive fluids, atomic scale structural properties of the high dielectric constant structure/Si(100) interfaces, and high-temperature post-processing/structure/function relationships. The gas phase composition during the growth process is to be monitored with unique real-time vapor phase detection. The properties, structure, and functionality of the films will be investigated with complementary techniques such as atomic scale resolution scanning transmission electron microscopy/electron energy loss spectroscopy, infrared spectroscopy with monolayer sensitivity, X-ray diffraction, and electrical characterization. The solid-state diffusion-reaction problems emerging from the oxidation and silicidation among adjacent elements during high temperature post-deposition processes will be studied with detailed physicochemical models.The project is anticipated to have a broad impact on micro- and nano-electronics technology and on the development of human resources. The involved students, both graduate and undergraduate, will engage in different atomic scale approaches to the growth and characterization of surface and interface nanostructures. Graduate students will regularly present their work to AL researchers, who will also provide experience in communication and project-oriented style of research management in an industrial setting. The University of Illinois at Chicago has a strong record of providing excellent educational experiences to a diverse body of students, including many women and under-represented minorities. An NSF Research Experiences for Undergraduates Site is also in place at the Chicago campus focused on "Novel Materials and Processing.
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批准号:1067424
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项目类别:Standard Grant
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资助金额:$47.5万
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财政年份:2011
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负责人:Christos Takoudis
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依托单位:
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依托单位:
REU Site in Novel Advanced Materials and Processing with Applications in Biomedical, Electrical and Chemical Engineering
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批准号:0755115
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资助金额:$32.61万
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财政年份:2008
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NIRT:Active Multiferroic Nanostructures
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批准号:0609377
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资助金额:$0.0万
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财政年份:2006
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负责人:Christos Takoudis
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依托单位:
REU: Novel Materials and Processing in Chemical and Biomedical Engineering
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批准号:0453432
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Christos Takoudis
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依托单位:
REU Site in Novel Materials and Processing
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批准号:0139551
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项目类别:Continuing Grant
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资助金额:$19.98万
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财政年份:2002
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负责人:Christos Takoudis
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依托单位:
Raman and Infrared Spectroscopic Characterization of Catalytic Interfaces in Flow Reactor and Gas-Phas Environments
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批准号:9813984
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项目类别:Standard Grant
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资助金额:$4.58万
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财政年份:1998
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负责人:Christos Takoudis
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依托单位:
REU Site for Microelectronic Materials and Processing
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批准号:9300405
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项目类别:Continuing Grant
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资助金额:$15.0万
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财政年份:1993
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负责人:Christos Takoudis
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依托单位:
REU Site for Microelectronic Materials and Processing
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批准号:9200056
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:1992
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负责人:Christos Takoudis
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依托单位:
In Situ Infrared Analysis of the Kinetics and Surface Chemistry of Reaction Processes on Silicon Subtrate Surfaces
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批准号:9106123
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项目类别:Continuing Grant
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资助金额:$12.24万
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财政年份:1991
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负责人:Christos Takoudis
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依托单位:
Silver Catalyzed Ethylene Epoxidation
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批准号:8611176
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项目类别:Standard Grant
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资助金额:$6.7万
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财政年份:1987
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负责人:Christos Takoudis
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依托单位:
Travel to Attend: International Chemical Reaction Engineer-ing Conference; Pune, India; January 9 - 11, 1984
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批准号:8320369
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项目类别:Standard Grant
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资助金额:$0.26万
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财政年份:1983
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负责人:Christos Takoudis
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依托单位:
海外基金