Nanostencil Lithography for Atomic-Scale Fabrication Scale-Up

用于原子级制造放大的纳米模板光刻

• 批准号: 2879454
• 金额: --
• 依托单位: University College London
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2879454
• 关键词: Nanostencil; Lithography; Atomic; Scale; Fabrication

In this project the student will develop ultrahigh vacuum (UHV) nanostencilling techniques [1] for integration withatomically-precise scanning probe microscopy (SPM) lithographies. Hydrogen resist lithography is a fabricationtechnique in which dopant atoms are incorporated into a silicon lattice, with atomic precision, using the tip of ascanning tunnelling microscope (STM) to pattern a single atomic layer of hydrogen providing a masking layer fordopant incorporation [2]. This is the only fabrication technique capable of producing deterministic, atomically-preciseelectronic devices. As such, it promises significant impact on future integrated circuit technologies and may lead toadvances in exotic device architectures such as quantum computers [3]. In order to achieve this promise, pathwaysto scale-up of atomic-scale device fabrication must be developed.UHV nanostencil shadow mask patterning is compatible with UHV-STM based fabrication, and can facilitate scale-upof atomic-scale fabrication by parallel patterning all but the finest details of a device, thus providing a contactframework within which the scanning probe can operate. In order to integrate nanostencil patterning with STMfabrication, compatible materials and processes must be developed. This requires engineering nanostencilling tools,and studying the surface and materials science of patterned structures. In this project, nanostencil shadow masks willbe designed and fabricated using standard cleanroom microfabrication techniques (electron beam lithography (EBL),Focused ion beam (FIB), etc) and then used to pattern devices in a UHV-STM system. As an integral part of thedevelopment process, layered and patterned structures fabricated at UCL will be characterised regularly using SPMat UCL and secondary ion mass spectrometry (SIMS) at Imperial, and less frequently using a variety of advanced andnovel characterization techniques at partner institutions [4], thus allowing development of both the fabricationprocesses and the measurement techniques.[1] A. Linklater and J. Nogami, Nanotech., 19, 285302 (2008).[2] T.J.Z. Stock, et. al., ACS Nano, 14, 3316 (2020).[3] C. D. Hill et. al., Sci. Adv., 1, e1500707 (2015).[4] N. D'Anna et. al., Adv. Electron. Mater., 2201212 (2023)

在这个项目中，学生将开发真空（UHV）纳米模板技术[1]，用于与原子级精确扫描探针显微镜（SPM）光刻集成。氢抗蚀剂光刻是一种制造技术，其中掺杂剂原子以原子精度并入硅晶格中，使用扫描隧道显微镜（STM）的尖端图案化单个氢原子层，为掺杂剂并入提供掩蔽层[2]。这是唯一能够生产确定性的、原子级精度的电子器件的制造技术。因此，它有望对未来的集成电路技术产生重大影响，并可能导致量子计算机等奇异设备架构的进步[3]。为了实现这一承诺，pathways to scale-up of atomic-scale device fabrication must be developed.UHV nanostencil shadow mask patterning is compatible with UHV-STM based fabrication，and can facilitate scale-up of atomic-scale fabrication by parallel patterning all but the finest details of a device，thus provides a contactframework within which the scanning probe can operate.为了将纳米模板图案化与STM制造集成，必须开发兼容的材料和工艺。这需要工程nanostencilling工具，并研究图案结构的表面和材料科学。在该项目中，将使用标准洁净室微加工技术（电子束光刻（EBL）、聚焦离子束（FIB）等）设计和制造纳米模板阴影掩模，然后用于对UHV-STM系统中的器件进行图案化。作为开发过程中不可或缺的一部分，在UCL制造的分层和图案化结构将定期使用UCL的SPMAT和帝国的二次离子质谱（西姆斯）进行表征，并不经常使用合作机构的各种先进和新颖的表征技术[4]，从而允许开发制造过程和测量技术。[1]A. Linklater和J. Nogami，纳米技术，19，285302（2008）中所述。[2]T.J. Z Stock，et.例如，ACS Nano，14，3316（2020）. [3]C. D. Hill et.例如，Sci.高级，1，e1500707（2015）。[4]N.安娜等例如，高级电子材料，2201212（2023）