Support for Conference on Defects in Nanoelectronic Materials; St. Petersburg, Russia

技术上的。将于2005年7月11日至14日在俄罗斯圣彼得堡举办一次研讨会，以解决先进的高k电介质中的缺陷。研讨会为研究人员提供了一个及时的论坛，以审查与在下一代半导体器件中使用先进的高k材料有关的复杂科学和技术问题。该研讨会的一个独特之处是特别关注这些材料中的缺陷。智能优势：传统的SiO_2/Si基MOSFET正在接近可伸缩的基本极限。栅电介质厚度小于1 nm时，漏电流降低了介电性能和可靠性，阻碍了传统二氧化硅的实际应用。人们认为，用新型的高介电常数(High-k)栅电介质材料取代SiO_2可能是解决栅氧化层结垢问题的一个可行方案。尽管在这一研究领域取得了重大进展，但高k材料在栅堆栈中仍然令人满意。高k集成到硅纳米技术的关键障碍似乎是电子缺陷。然而，人们对缺陷的原子尺度性质或消除或最小化缺陷的可能技术知之甚少。非技术性的。所要求的资金将用于支持学生、妇女、少数民族和青年科学家参加讲习班。参加这次会议预计将增加他们对该领域的知识，并帮助他们将欧洲和世界其他地区领先实验室的新想法和结果带回美国。它还将帮助这些和其他美国参与者确定该领域未来研究的优先方向。会议成果/论文将在年底前由Springer-Verlag出版成书。研讨会的网站是：http://www.ioffe.ru/natoarw/2005/info.html。研讨会由MPS/DMR和OISE共同资助。

Technical. A workshop to address defects in advanced high-k dielectrics will be held in St. Petersburg, Russia, July 11 -14, 2005. The workshop provides a timely forum for researchers to examine the complex scientific and technological issues that pertain to the use of advanced high-k materials in next generation semiconductor devices. A unique feature of the workshop is a special focus on defects in these materials. Intellectual merit: Conventional SiO2/Si-based MOSFET's are approaching the fundamental limit of scaling. Below 1 nm in gate dielectric thickness, leakage currents degrade dielectric performance and reliability, preventing practical use for conventional SiO2. It is thought that a feasible solution to the gate oxide scaling problem may be to replace SiO2 with novel high permittivity (high-k) gate dielectric materials. Despite significant progress achieved in this area of research, high-k materials are still satisfactory in the gate stack. The key obstacles to high-k integration into Si nano-technology appear to be electronic defects. However, little is known about the atomic scale nature of the defects or about possible techniques to eliminate, or to minimize them. Non-technical. The requested funds will be used to support students, women, minorities and young scientists to attend the Workshop. Participating in the conference is expected to increase their knowledge of the field and help them bring back to the U.S. new ideas and results from leading laboratories in Europe and elsewhere in the world. It will also help these and other U.S. participants to identify priority directions for future research in the field. Conference results/papers will be published as a book by Springer-Verlag by the end of the year. The website for the workshop is: http://www.ioffe.ru/natoarw/2005/info.html . The workshop is co-funded by MPS/DMR and OISE.