MRSEC: The Georgia Tech Laboratory for New Electronic Materials
MRSEC: The Georgia Tech Laboratory for New Electronic Materials
批准号:
0820382
负责人:
Dennis Hess
金额:
$675.0万
依托单位国家:
美国
项目类别:
Cooperative Agreement
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-09-01 至 2015-08-31
中文摘要
佐治亚理工学院的材料研究科学和工程中心(MRSEC)致力于解决微电子、光学和传感器应用中对新电子材料和相关工艺的需求。调用材料生长方法、电、化学和物理表征、图案生成、器件制造和理论/建模,以确保对新材料和器件的开发和研究采取整体和跨学科的方法。石墨烯科学和技术单一跨学科研究小组研究外延石墨烯作为电子材料的制造和表征方法。MRSEC与世界各地的公司、国家实验室和大学进行了广泛的合作。支持和促进广泛的教育活动和将材料研究纳入K-12、大学和专业教育的外展计划。佐治亚理工学院和合作机构的共享实验设施确保了制造和表征材料的能力,以便在各种应用中使用。
英文摘要
The Materials Research Science and Engineering Center (MRSEC) at the Georgia Institute of Technology addresses the need for new electronic materials and associated processes for applications in microelectronics, optics and sensors. Materials growth methods, electrical, chemical and physical characterization, pattern generation, device fabrication, and theory/modeling are invoked to ensure holistic and interdisciplinary approaches to the development and investigation of novel materials and devices. The single Interdisciplinary Research Group on Graphene Science and Technology investigates fabrication and characterization approaches for the implementation of epitaxial graphene as an electronic material. The MRSEC has extensive collaborations with corporations, national laboratories and universities world-wide. Broad educational activities and outreach programs that integrate materials research into K-12, university and professional education are supported and fostered. Shared experimental facilities at Georgia Tech and partner institutions ensure the ability to fabricate and characterize materials for use in a variety of applications.
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Low Temperature Plasma Etching of Copper to Minimize Size Effects in Sub-100 nm Features
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批准号:0755607
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项目类别:Continuing Grant
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资助金额:$30.0万
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财政年份:2008
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负责人:Dennis Hess
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依托单位:
GOALI: Photoresist Dissolution and Stripping in Gas Expanded Liquids
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批准号:0343142
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项目类别:Continuing Grant
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资助金额:$34.73万
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财政年份:2004
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负责人:Dennis Hess
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依托单位:
LT: Removal of Organic Films and Contaminants from Surfaces Using Elevated Pressure, Elevated Temperature Water
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批准号:9727249
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:1997
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负责人:Dennis Hess
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依托单位:
Plasma Oxidation/Anodization of Silicon Films for Photovoltaic and Flat Panel Display Applications
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批准号:9214138
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项目类别:Continuing Grant
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资助金额:$23.7万
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财政年份:1992
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负责人:Dennis Hess
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依托单位:
Engineering Creativity Award: Microwave Plasma Induced Oxidation of Semiconductor
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批准号:8710988
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项目类别:Continuing Grant
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资助金额:$9.0万
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财政年份:1987
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负责人:Dennis Hess
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依托单位:
Morphology, Structure, and Adhesion of Plasma-Deposited ThinFilms
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批准号:8611473
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项目类别:Continuing Grant
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资助金额:$26.73万
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财政年份:1987
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负责人:Dennis Hess
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依托单位:
Etching of Aluminum in Halogen-Containing Gasses and Plasmas
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批准号:8319353
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项目类别:Continuing Grant
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资助金额:$20.47万
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财政年份:1984
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负责人:Dennis Hess
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依托单位:
Plasma Etching of Aluminum For Integrated Circuits Applications
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批准号:8021508
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项目类别:Continuing Grant
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资助金额:$16.55万
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财政年份:1981
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负责人:Dennis Hess
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依托单位:
Plasma Etching of Thin Films For Integrated Circuits
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批准号:7812236
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项目类别:Standard Grant
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资助金额:$7.8万
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财政年份:1979
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负责人:Dennis Hess
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依托单位:
海外基金