MRI: Acquisition of a sputtering system for contact metallization of WBG semiconductor for high temperature application in air ambient.

技术摘要：宽带隙（WBG）半导体器件由于其固有的特性，可以在高温、高辐射和反应性环境等极端环境下工作。然而，在恶劣的环境中，通常的触点和互连会在半导体失效之前很久就失效。该研究的目标之一是探索难熔金属及其合金和硅化物作为氧化和扩散阻挡层，以保护WBG半导体器件上的触点。这项主要的研究仪器奖将资助在伊丽莎白城市州立大学购置一个溅射系统。该溅射系统将用于在真空中沉积高温阻隔材料。该器件的有效性和可靠性将取决于真空溅射阻挡层（100 nm厚）与WBG半导体（SiC， GaN和Diamond）上的触点之间的界面反应（包括氧缺陷和迁移率或碳的积累）。为了在高温下物理表征界面反应，将采用卢瑟福后向散射光谱法（RBS）、俄歇电子能谱法（AES）和电子显微镜法（TEM & SEM）。简单肖特基器件电特性的稳定性将表明该阻隔层在恶劣环境下的有效性。获得溅射系统也将使我们能够探索与诺福克州立大学材料研究中心和Varicon公司在建筑节能“智能窗户”领域的新合作。对于这种和类似的应用，称为显色材料的太阳能材料（主要是掺杂过渡金属氧化物）将与溅射系统一起沉积，并由合作者进行局部表征。摘要：这项主要的研究仪器奖资助了伊丽莎白城市州立大学的溅射系统的收购。该溅射系统将用于在真空中沉积高温金属纳米层（厚度约为人类头发厚度的千分之一）。金属纳米层将被探索作为保护在宽带隙（WBG）半导体（SiC, GaN，金刚石等）上制造的器件的阻挡层。这些半导体具有固有的特性，使它们能够在高温、高辐射和反应性环境等恶劣环境条件下生存。然而，如果不加以保护，通常的触点在极端环境条件下很容易失效，从而限制了WBG半导体器件的性能。能够在这种极端条件下运行的专用电子设备（包括用于航空航天和汽车工业的高功率开关、传感器、控制和电源管理）可以安装在汽车发动机缸体内，以提高燃油消耗效率，减少大气污染（由于气体燃烧不完全）。在高温的环境空气中，复合接触金属化结构中相邻层之间的反应是限制WBG半导体器件可靠性和有效性的因素之一。其中一个主要目标是使用最先进的、高科技的表面分析设备来研究这些反应。一个简单的肖特基二极管器件，适当的保护阻挡层，将评估在高温下的环境空气在一段较长的时间。器件电特性的稳定性将直接影响阻挡层的有效性。使用溅射系统还将使该团队能够探索与诺福克州立大学材料研究中心和Varicon公司在建筑节能“智能窗户”领域的新合作。对于这种和类似的应用，称为显色材料的太阳能材料（主要是掺杂过渡金属氧化物）将与溅射系统一起沉积，并由合作者进行局部表征。

Technical Abstract: Wide Band Gap (WBG) semiconductor-based devices are capable of operating in extreme environmental conditions such as high temperatures, high radiation and reactive environments because of the intrinsic properties of the semiconductors. However, usual contacts and interconnects will fail long before the semiconductor fails in harsh environments. One of the goals of the research is to explore refractory metals, their alloys and silicides as oxidation and diffusion barrier layers to protect contacts on WBG semiconductor-based devices. This major research instrumentation award will fund the acquisition of a sputtering system at Elizabeth City State University. The sputtering system will be used to deposit high temperature barrier material in vacuum. The effectiveness and reliability of the device will depend interfacial reactions (including oxygen defects and mobility or accumulation of carbon) between vacuum sputtered barrier layer ( 100 nm thick) and contacts on WBG semiconductors (SiC, GaN, and Diamond). To physically characterize interface reactions at elevated temperatures, Rutherford Backscattering Spectrometry (RBS), Auger Electron Spectroscopy (AES), and Electron Microscopy (TEM & SEM) will be employed. The stability of the electrical characteristics of a simple schottky device will indicate the effectiveness of the barrier layer in harsh environment. Access to a sputtering system will also enable us to explore new collaborations with the center for materials research at Norfolk State University and Varicon Inc. in the field of "smart windows" for efficient energy use in buildings. For this and similar applications, solar materials called chromogenic materials (mostly doped transition metal oxide) will be deposited with the sputtering system and characterized locally and by collaborators.Non-technical Abstract: This major research instrumentation award funds the acquisition of a sputtering system at Elizabeth City State University. The sputtering system will be used to deposit high temperature metallic nano-layers (layers with thickness of about one-thousandth the thickness of human hair) in vacuum. The metallic nano-layers will be explored as barrier layer to protect devices fabricated on Wide Band Gap (WBG) semiconductors (SiC, GaN, Diamond, etc). These semiconductors have intrinsic properties that make them capable of surviving in harsh environmental conditions such as high temperature, high radiation and reactive environment. However, usual contacts will fail readily under extreme environmental conditions if not protected, limiting the WBG semiconductor-based device capability. Specialized electronic devices (including high power switches, sensors, controls and power management for aerospace and automotive industries) capable of operating at such extreme conditions can be located inside automobile engine block for more efficient fuel consumption and reduced atmospheric pollution (due to incomplete gas combustion). In ambient air at elevated temperature, reaction between adjacent layers in a composite contact metallization structure is one of the factors that will limit the reliability and effectiveness of WBG semiconductor-based devices. One of the primary goals is to study such reactions using state-of-the-art, high technology equipment for surface analysis. A simple schottky diode device with appropriate protective barrier layer will be evaluated in ambient air at high temperatures over an extended period of time. The stability of the devices electrical characteristics will imply the effectiveness of the barrier layer. Access to a sputtering system will also enable the team to explore new collaborations with the center for materials research at Norfolk State University and Varicon Inc. in the field of "smart windows" for efficient energy use in buildings. For this and similar applications, solar materials called chromogenic materials (mostly doped transition metal oxide) will be deposited with the sputtering system and characterized locally and by collaborators.