Erbium Doped III-Nitrides for Optical Communications and Silicon Photonics

该项目由电气、通信和网络系统(ECCS)的电子、光子学和磁性器件计划(EPMD)和材料研究部(DMR)的电子和光子材料计划(EPM)联合资助。智力优势：该项目包括优化掺铒以提高光学效率；开发1.5微米有源氮化物光放大器和发射器的器件制造工艺；以及光电子技术的新应用。计划中的研究将涉及利用最先进的设施在新材料生长、表征、纳米制造技术和材料/器件加工领域对研究生和本科生进行培训。掺Er的III-氮化物光子结构可能会导致新型的电泵浦光放大器。这种器件将具有半导体光放大器的独特优点(体积小、电泵浦和光子集成能力)以及掺Er光纤放大器的独特优点(光网络中不同波长通道之间的串扰最小)。这些研究还将为开发合适的高质量材料和对材料性质的基本了解以及在制造从红外到深紫外光活跃的集成光电子器件方面的技术进步提供参考。更广泛的影响：这项提议有可能在用于光通信和信息处理的电泵浦半导体光放大器的开发方面取得变革性的进步。该项目将涉及利用最先进的设施对研究生和本科生进行新材料生长、表征、纳米制造技术和材料/器件加工领域的培训。此外，PIS将继续与当地初中生保持密切关系，并招募妇女参与他们的研究。

This project is jointly funded by the Electronics, Photonics, and Magnetic Devices Program (EPMD) in the Division of Electrical, Communications and Cyber Systems (ECCS) and the Electronic and Photonic Materials Program (EPM) in the Division of Materials Research (DMR).Intellectual Merit: The project includes optimization of Erbium incorporation for enhanced optical efficiency; development of device fabrication processes of nitride optical amplifiers and emitters active at 1.5 microns; and new applications in optoelectronic technologies. The planned research will involve training of graduate and undergraduate students in the areas of novel materials growth, characterization, nano-fabrication techniques and material/device processing using the state-of-the-art facilities. The Er-doped III-nitride photonic structures may lead to novel electrically pumped optical amplifiers. Such devices would possess the unique advantages of semiconductor optical amplifiers (small size, electrical pumping, and ability for photonic integration) as well as those of Er-doped fiber amplifiers (minimal crosstalk between different wavelength channels in optical networks). The studies would also provide input for the development of suitable quality materials and the fundamental understanding of material properties, as well as the technological advancement in the fabrication of integrated optoelectronic devices active from infrared to deep UV. Broader Impact: This proposal has the potential to make transformative advancements in development of electrically pumped, semiconductor optical amplifiers for optical communications and information processing. The project will involve training of graduate and undergraduate students in the areas of novel materials growth, characterization, nano-fabrication techniques and material/device processing using the state-of-the-art facilities. In addition, the PIs will continue their close relationship with local middle - high schools students and to recruit women into their research.