Layer-Structured Semiconductor Alloys: Growth, Characterization, and Applications

技术描述：本研究项目是研究层状结构（BN）x(C2)1-x半导体合金，重点是通过金属有机化学气相沉积法生长材料，研究材料的基本性能，探索潜在的应用前景。（BN）x(C2)1-x半导体合金代表了一种独特的材料体系，用于探索从远红外到深紫外的光学性质的演变以及在相同晶体结构下从绝缘体到半金属的输运性质。研究任务包括探测基本的光学和电学性质，如能量带隙及其随温度和合金成分的变化，自由、束缚和局域激子跃迁，杂质能级，n型和p型电导率控制的可行性，以及载流子输运性质。非技术描述：该项目利用最先进的设施，在新材料生长、表征、纳米制造技术和材料/器件加工等领域培养博士后研究人员、研究生和本科生。（BN）x(C2)1-x材料体系具有补充氮化宽禁带半导体和碳基纳米结构材料的潜力，能够实现芯片级多光谱光源和探测器以及全光谱多结太阳能电池。最终，开发的材料可能会对能源、医疗、安全和通信产生重大影响。

Technical Description: This research project is to investigate layer-structured (BN)x(C2)1-x semiconductor alloys with an emphasis on materials growth by metal organic chemical vapor deposition, basic material properties studies, and exploration of potential applications. (BN)x(C2)1-x semiconductor alloys represent a unique material system for exploring the evolution of optical properties from far infrared to deep ultraviolet and transport properties from insulator to semi-metal in the same crystal structure. Research tasks include the probe of fundamental optical and electrical properties such as the energy bandgap and its variation with temperature and alloy composition, free, bound, and localized exciton transitions, impurity energy levels, feasibility of n- and p-type conductivity control, and carrier transport properties.Non-technical Description: The project trains postdoctoral researchers, graduate and undergraduate students in the areas of novel materials growth, characterization, nano-fabrication techniques and material/device processing using the state-of-the-art facilities. (BN)x(C2)1-x material system has the potential to complement nitride wide-bandgap semiconductors and carbon based nanostructured materials and enable the realization of chip-scale multi-spectral light sources and detectors and full spectral multi-junction solar cells. Ultimately, the materials developed could have a major impact on energy, medical, security, and communication.