I-Corps: High Density Memristive Devices for Non-Volatile Memory Applications

该方案的目标是为非易失性存储器(NVM)市场开发高密度、低功耗和低成本的记忆/电阻随机存取存储器(ReRAM)器件。在半导体路线图上，Memristive/ReRAM器件被确定为当前闪存的领先潜在替代品，并且是一种使能TB/cm2数据“片上存储”的技术，其密度几乎比当前技术高3个数量级。然而，商业化的主要挑战仍然是解决关键问题，包括：(I)电铸，(Ii)严格控制合规电流，(Iii)降低开关能量，(Iv)器件到器件的可变性，(V)耐用性和周期到周期的可变性，以及(Vi)1Diode 1ReRAM(1D1R)交叉开关结构的演示。由于对这些器件中的开关和电荷传输机制缺乏基本的了解，这种认识上的差距仍然存在。通过之前NSF资助的这一领域研究的基础研究，该团队找到了应对这些挑战的潜在解决方案。NVM目前的市场规模约为260亿美元，预计将以每年14%的速度增长，到2015年将达到512亿美元。这些NVM设备对于智能手机、平板电脑、笔记本电脑、数码相机、视频录制和拇指驱动器中的海量数据存储正变得越来越重要。由于基本的扩展限制，当前的NAND闪存技术将无法满足这一需求。这项拟议的创新将提供高密度、低功耗的基于Memristive/ReRAM设备的存储器，具有更快的写入/擦除/读取时间、105个周期的耐久性和10年的保存期等额外的性能优势。这些器件展示了多层单元(MLC)存储，这将为低成本的每位存储提供一个有吸引力的解决方案。1KB存储器在1D1R配置中的演示将显著提高对科学技术的理解，并将对通过3-D堆叠开发高密度存储器产生重大影响。如果成功，这将对俄亥俄州西北部的经济发展和就业创造产生直接影响，并有助于保持美国在这项新兴技术方面的领导地位。

The objective of this proposal is to develop high-density, low-power, and low-cost memristive/Resistive Random Access Memory (ReRAM) devices for Non-Volatile Memory (NVM) market. The memristive/ReRAM devices are identified on the semiconductor roadmap as a leading potential replacement for the present flash memories and an enabling technology for Terabytes/cm2 data "storage on chip" almost 3 orders of magnitude denser than the current technology. However, the major challenges to commercialization remain in addressing critical issues including: (i) electroforming, (ii) tight control of compliance current, (iii) reducing switching energy, (iv) device-to-device variability, (v) endurance and cycle-to-cycle variability, and (vi) demonstration of 1Diode 1ReRAM (1D1R) crossbar structures. This gap in knowledge persists due to a lack of fundamental understanding on switching and charge transport mechanism in these devices. The fundamental studies through previous NSF-funded research in this area led the team to a potential solution that addresses these challenges. The current market for NVM is around 26 billion USD and is projected to grow at 14% annually, reaching 51.2 billion USD by 2015. These NVM devices are becoming increasingly important for massive data storage in smart-phone, tablets, notebooks, digital cameras, video recording, and thumb-drives. The current NAND-flash technology will be unable to meet this demand due to fundamental scaling limits. The proposed innovation will provide high-density, low-power memristive/ReRAM devices based memories with additional performance benefits of fast write/erase/read times, endurance of 105 cycles, and 10 years of retention. These devices demonstrate Multi-Level Cell (MLC) storage that will provide an attractive solution for low-cost per bit storage. The demonstration of 1kb memory in 1D1R configuration will significantly enhance the scientific and technological understanding and will have significant impact on developing high-density memory by 3-D stacking. If successful, this will have a direct impact on economic development and job creation in Northwest Ohio and help maintain the US leadership in this emerging technology.