Gated Synaptic Memory Devices with Adaptive Short-Term States for Neuromorphic Computing
Gated Synaptic Memory Devices with Adaptive Short-Term States for Neuromorphic Computing
批准号:
1926465
负责人:
Rashmi Jha
金额:
$30.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2019
资助国家:
美国
项目状态:
已结题
起止时间:
2019-09-15 至 2024-08-31
中文摘要
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英文摘要
Artificial Intelligence (AI) techniques for big data analytics are becoming very important. However, AI software algorithms are computation resource intensive which imposes limitations on their practical applications as the currently available data processors are not well-suited for these needs. For example, training algorithms for AI can take several hours to days for completing the training process. Additionally, some of the other challenges, such as the requirement for huge training datasets, lack of real-time training and multi-modal data fusion capabilities, and limitations for the system to make decisions reliably with limited input data are well-recognized. Many of these problems can be addressed if brain-inspired neuromorphic data processors can be developed. However, it is a non-trivial task because of two primary reasons. First, the cortical circuits in brain is not fully understood and still is a topic of research in the neuroscience community. Second, artificial neuromimetic components for integration in brain-inspired architectures are not yet developed to match the computational efficiency and diversity of biological-brains. It has been identified from current understanding of cortical circuits in biological-brain that a synapse which is a reconfigurable connection between neurons, play pivotal a role in learning and memory formation. The focus of this project is to develop artificial nanoelectronic synaptic devices that can be integrated in neuromorphic architectures. The project provides significant opportunities for training graduate and undergraduate students in understanding and developing neuromorphic processors for AI. A new course on "Neuromorphic Computers for AI" at the graduate level will be developed. Efforts will be made to increase participation of underrepresented groups in STEM by leveraging the program on "Nurturing Educational Readiness and Development from the Start (NERDS)" and through local Association for Computing Machinery (ACM) chapter. The nanoelectronic synaptic device will be developed by exploiting time-dependent trap dynamics in oxides in conjunction with the transport of intrinsic or extrinsic dopants in a novel gated-Synaptic Memory Device (gated-SMD) configuration. These dynamics will result in an analog potentiation (increase in conductance) and depression (decrease in conductance) as a function of the temporal sequences of voltage-pulses on gate that can be explored for implementing bio-inspired learning algorithms. The objective of the proposed research will be achieved by executing the following specific aims: (1) fabricating gated-SMDs and studying the device characteristics, including potentiation and depression of resistive states on different time-scales as a function of gate-bias and modeling it; (2) understanding the scalability of these devices by large-scale layout designs and comparing and benchmarking the cell sizes against other candidate memory technologies; and (3) developing novel real-time learning algorithms and implementing bio-inspired learning schemes using gated-SMDs for neuromorphic architectures. The intellectual significance of the proposed research lies in knowledge base and a device platform to provide a solution of nanoelectronic synapses for neuromorphic circuits. If successful, the project will yield the following outcomes: (i) a fundamental understanding of gated-SMDs and device models benchmarked against experimental data, (ii) strategies to control potentiation and depression rates of resistive states in gated-SMD by engineering the device parameters, (iii) real-time learning algorithms tailored for gated-SMDs, and (iv) large-scale integration routes for gated-SMDs and scalability data. The achievement of these outcomes will have transformative impact on developing neuromorphic data processors for AI.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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DOI:
10.1109/paine56030.2022.10014765
发表时间:
2022-10
期刊:
2022 IEEE Physical Assurance and Inspection of Electronics (PAINE)
影响因子:
--
作者:
[N. Haehn;Bayley King;R. Jha;T. Kebede;David Kapp]
通讯作者:
N. Haehn;Bayley King;R. Jha;T. Kebede;David Kapp
Emerging Memory Devices Beyond Conventional Data Storage: Paving the Path for Energy-Efficient Brain-Inspired Computing
超越传统数据存储的新兴存储设备:为节能的类脑计算铺平道路
DOI:
10.1149/2.f10231if
发表时间:
2023
期刊:
The Electrochemical Society Interface
影响因子:
--
作者:
[Jha, Rashmi]
通讯作者:
Jha, Rashmi
NeuroSOFM: A Neuromorphic Self-Organizing Feature Map Heterogeneously Integrating RRAM and FeFET
NeuroSOFM:异构集成 RRAM 和 FeFET 的神经形态自组织特征图
DOI:
10.1109/jxcdc.2021.3119489
发表时间:
2021
期刊:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
影响因子:
2.4
作者:
[Barve, Siddharth, Mayersky, Joshua, Ford, Andrew J., Jones, Alexander, King, Bayley, Ruen, Aaron, Jha, Rashmi]
通讯作者:
Jha, Rashmi
DOI:
10.1109/igsc51522.2020.9291114
发表时间:
2020-10
期刊:
2020 11th International Green and Sustainable Computing Workshops (IGSC)
影响因子:
--
作者:
[Andrew J. Ford;R. Jha]
通讯作者:
Andrew J. Ford;R. Jha
A Compact Gated-Synapse Model for Neuromorphic Circuits
神经形态电路的紧凑门控突触模型
DOI:
10.1109/tcad.2020.3028534
发表时间:
2021
期刊:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
影响因子:
2.9
作者:
[Jones, Alexander, Jha, Rashmi]
通讯作者:
Jha, Rashmi
共 8 条
SemiSynBio-III: Novel Memory Devices for High-Density Data Storage and In-Memory Computing Based on Integrated Synthetic DNA-Semiconductors
-
批准号:2227484
-
项目类别:Standard Grant
-
资助金额:$140.85万
-
财政年份:2022
-
负责人:Rashmi Jha
-
依托单位:
Workshop on Devices-to-Systems for In-Memory Computing, being held Virtual at the University of Cincinnati, Cincinnati, Ohio, May 11-12, 2021.
-
批准号:2128685
-
项目类别:Standard Grant
-
资助金额:$2.52万
-
财政年份:2021
-
负责人:Rashmi Jha
-
依托单位:
SHF:Small: Collaborative Research: Exploring 3-Dimensional Integration Strategies of STTRAM
-
批准号:1718428
-
项目类别:Standard Grant
-
资助金额:$22.5万
-
财政年份:2017
-
负责人:Rashmi Jha
-
依托单位:
SaTC: Collaborative: Exploiting Spintronics for Security, Trust and Authentication
-
批准号:1556301
-
项目类别:Standard Grant
-
资助金额:$19.7万
-
财政年份:2015
-
负责人:Rashmi Jha
-
依托单位:
CAREER:Novel Nanoelectronic Reconfigurable Synaptic Memory Devices
-
批准号:1556294
-
项目类别:Standard Grant
-
资助金额:$9.2万
-
财政年份:2015
-
负责人:Rashmi Jha
-
依托单位:
SaTC: Collaborative: Exploiting Spintronics for Security, Trust and Authentication
-
批准号:1441733
-
项目类别:Standard Grant
-
资助金额:$20.0万
-
财政年份:2014
-
负责人:Rashmi Jha
-
依托单位:
CAREER:Novel Nanoelectronic Reconfigurable Synaptic Memory Devices
-
批准号:1254271
-
项目类别:Standard Grant
-
资助金额:$40.0万
-
财政年份:2013
-
负责人:Rashmi Jha
-
依托单位:
I-Corps: High Density Memristive Devices for Non-Volatile Memory Applications
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批准号:1242417
-
项目类别:Standard Grant
-
资助金额:$5.0万
-
财政年份:2012
-
负责人:Rashmi Jha
-
依托单位:
BRIGE: Transition Metal Oxide Based Multifunctional Nanoelectronic Memristor Devices
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批准号:1125743
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项目类别:Standard Grant
-
资助金额:$17.11万
-
财政年份:2011
-
负责人:Rashmi Jha
-
依托单位:
海外基金