BRIGE: Transition Metal Oxide Based Multifunctional Nanoelectronic Memristor Devices

BRIGE：基于过渡金属氧化物的多功能纳米电子忆阻器器件

• 批准号: 1125743
• 负责人: Rashmi Jha
• 金额: $ 17.11万
• 依托单位: University of Toledo
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-10-01 至 2014-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1125743&HistoricalAwards=false
• 关键词: BRIGE; Transition; Metal; Oxide; Based

PI: Rashmi JhaInstitution: University of ToledoTitle: BRIGE: Transition Metal Oxide Based Multifunctional Nanoelectronic Memristor DevicesABSTRACTIntellectual Merit: The two terminal nanoelectronic memristor devices offer an attractive solution for addressing the needs of high-density non-volatile data storage beyond the fundamental limits of Complementary Metal Oxide Semiconductor (CMOS) technology. The unique charge-flux characteristics of memristor devices offers applications in several key areas including high?density and high-performance digital data storage, digital computing, analog non-volatile memory, adaptive neural circuits, and energy-efficient massively parallel neuromorphic computing. This BRIGE project experimentally investigates memristive devices with Hafnium dioxide (HfO2) based switching layer and metal electrodes such as Tungsten (W), Nickel (Ni), Titanium Nitride (TiN), and Ruthenium (Ru). The research develops a fundamental knowledge about the charge transport mechanisms responsible for the switching behavior and how it depends on several process and device parameters such as the composition and thickness of the switching layer, electrodes, and oxygen vacancies concentration in the switching layer. Finally, the project seeks to demonstrate the application of these devices for high-density and high-performance digital and analog memory by systematically studying the switching speed, non-volatile resistive states, reliability, durability, and data-loss effects. Broader Impacts: The project on memristive devices is expected to have significant impact in the areas of consumer electronic products, energy- efficient extreme-scale computing, and development of self-learning adaptive circuits. The research will be tightly integrated with education at graduate, undergraduate, and high-school levels. The graduate and undergraduate students will gain significant experience in the areas of fabrication and electrical characterization of nanoelectronic devices, which will prepare them to address the challenges of nanoelectronics in 21st century. A course in the area of emerging memory devices will be developed by integrating lectures with hands-on laboratory experience for graduate and undergraduate students. An educational module with live demonstrations to teach the basics of semiconductor devices will be developed for the high school students. Participation in engineering research will be broadened at all levels through activities including research experience for undergraduates, and outreach activities focused on increasing the participation of underrepresented groups in engineering through summer camp for the high school girls, lab experience for the high school girls, active mentoring, and recruitment of the underrepresented students.

主要研究者：Rashmi Jha机构：University of Toledo托莱多大学BRIGE：基于过渡金属氧化物的多功能纳米电子忆阻器器件摘要智力优势：两端纳米电子忆阻器器件提供了一种有吸引力的解决方案，用于解决超出互补金属氧化物半导体（CMOS）技术的基本限制的高密度非易失性数据存储的需求。忆阻器件独特的电荷通量特性提供了几个关键领域的应用，包括高？高密度和高性能数字数据存储、数字计算、模拟非易失性存储器、自适应神经电路和节能大规模并行神经形态计算。该BRIGE项目实验研究了具有基于二氧化铪（HfO2）的开关层和金属电极（例如钨（W）、镍（Ni）、氮化钛（TiN）和钌（Ru））的忆阻器件。该研究开发了有关负责开关行为的电荷传输机制的基础知识，以及它如何取决于几个工艺和器件参数，如开关层，电极和开关层中的氧空位浓度的组成和厚度。最后，该项目旨在通过系统地研究开关速度，非易失性电阻状态，可靠性，耐用性和数据丢失影响来展示这些器件在高密度和高性能数字和模拟存储器中的应用。 更广泛的影响：有关忆阻器件的项目预期将对消费电子产品、节能极限规模计算及自学习自适应电路的开发等领域产生重大影响。这项研究将与研究生、本科生和高中教育紧密结合。研究生和本科生将在纳米电子器件的制造和电气特性方面获得重要的经验，这将使他们能够应对21世纪世纪纳米电子学的挑战。在新兴的存储器设备领域的课程将通过整合讲座与动手实验室经验的研究生和本科生开发。将为高中生开发一个教育模块，并提供现场演示，以教授半导体器件的基础知识。 工程研究的参与将通过包括本科生研究经验在内的活动在各级扩大，并通过高中女生夏令营，高中女生实验室经验，积极辅导和招募代表性不足的学生，重点增加代表性不足的群体参与工程的外联活动。