BRIGE: Transition Metal Oxide Based Multifunctional Nanoelectronic Memristor Devices

PI: Rashmi JhaInstitution: University of toledo标题：bridge：基于过渡金属氧化物的多功能纳米电子忆阻器器件摘要知识优点：双端纳米电子忆阻器器件为解决高密度非易失性数据存储的需求提供了一个有吸引力的解决方案，超越了互补金属氧化物半导体（CMOS）技术的基本限制。忆阻器器件独特的电荷通量特性在几个关键领域提供了应用，包括高？密度和高性能数字数据存储，数字计算，模拟非易失性存储器，自适应神经电路，节能大规模并行神经形态计算。这个bridge项目实验研究了基于二氧化铪（HfO2）的开关层和金属电极(如钨（W)、镍（Ni）、氮化钛（TiN）和钌（Ru））的忆阻器件。该研究发展了对开关行为的电荷传输机制的基本知识，以及它如何依赖于几个工艺和器件参数，如开关层的组成和厚度、电极和开关层中的氧空位浓度。最后，该项目旨在通过系统地研究开关速度、非易失性电阻状态、可靠性、耐用性和数据丢失效应，展示这些器件在高密度和高性能数字和模拟存储器中的应用。更广泛的影响：忆阻器件项目预计将对消费电子产品、节能极端规模计算和自学习自适应电路的开发领域产生重大影响。这项研究将与研究生、本科和高中阶段的教育紧密结合。研究生和本科生将在纳米电子器件的制造和电气特性方面获得丰富的经验，这将为他们应对21世纪纳米电子学的挑战做好准备。将为研究生和本科生开设一门新兴存储器件领域的课程，将讲座与动手实验经验相结合。将为高中学生开发一个教育模块，通过现场演示来教授半导体器件的基础知识。通过为本科生提供研究体验、为高中女生提供夏令营、为高中女生提供实验室体验、积极指导和招募代表性不足的学生等活动，致力于增加代表性不足群体参与工程研究的外展活动，将扩大各个层次对工程研究的参与。

PI: Rashmi JhaInstitution: University of ToledoTitle: BRIGE: Transition Metal Oxide Based Multifunctional Nanoelectronic Memristor DevicesABSTRACTIntellectual Merit: The two terminal nanoelectronic memristor devices offer an attractive solution for addressing the needs of high-density non-volatile data storage beyond the fundamental limits of Complementary Metal Oxide Semiconductor (CMOS) technology. The unique charge-flux characteristics of memristor devices offers applications in several key areas including high?density and high-performance digital data storage, digital computing, analog non-volatile memory, adaptive neural circuits, and energy-efficient massively parallel neuromorphic computing. This BRIGE project experimentally investigates memristive devices with Hafnium dioxide (HfO2) based switching layer and metal electrodes such as Tungsten (W), Nickel (Ni), Titanium Nitride (TiN), and Ruthenium (Ru). The research develops a fundamental knowledge about the charge transport mechanisms responsible for the switching behavior and how it depends on several process and device parameters such as the composition and thickness of the switching layer, electrodes, and oxygen vacancies concentration in the switching layer. Finally, the project seeks to demonstrate the application of these devices for high-density and high-performance digital and analog memory by systematically studying the switching speed, non-volatile resistive states, reliability, durability, and data-loss effects. Broader Impacts: The project on memristive devices is expected to have significant impact in the areas of consumer electronic products, energy- efficient extreme-scale computing, and development of self-learning adaptive circuits. The research will be tightly integrated with education at graduate, undergraduate, and high-school levels. The graduate and undergraduate students will gain significant experience in the areas of fabrication and electrical characterization of nanoelectronic devices, which will prepare them to address the challenges of nanoelectronics in 21st century. A course in the area of emerging memory devices will be developed by integrating lectures with hands-on laboratory experience for graduate and undergraduate students. An educational module with live demonstrations to teach the basics of semiconductor devices will be developed for the high school students. Participation in engineering research will be broadened at all levels through activities including research experience for undergraduates, and outreach activities focused on increasing the participation of underrepresented groups in engineering through summer camp for the high school girls, lab experience for the high school girls, active mentoring, and recruitment of the underrepresented students.