Valence Subband Engineering in High Al-content AlGaN Quantum Wells Active Regions for Deep Ultraviolet Lasers and Emitters

本研究的目的是对实现高性能iii -氮化物深紫外（UV）发光二极管（led）和240-300 nm激光器的问题和解决方案进行全面研究。该研究将导致电注入深紫外发射器适用于国土安全，水净化，环境传感和生化试剂检测。该计划允许研究生和本科生接受多学科研究的培训，包括半导体光电子材料和器件的物理学，材料物理和外延，半导体纳米结构以及器件设计和制造。该项目将为两名iii -氮化物技术的博士生提供培训，这对深紫外发射器和固态照明应用都至关重要。本项目所追求的方法是开发一种新方法，通过引入纳米级层来实现活性区域的价子带排列，这将导致光学增益和自发发射率的提高，以及在中紫外和深紫外光谱区域控制发射偏振的能力。具有大光学增益的新型基于algan和alin的量子阱的材料开发和外延，特别是用于实现高性能深紫外led和激光器，将继续进行。这些新型量子阱在器件结构中的实现将被用于实现高性能的电注入iii -氮化物深紫外发射器。

The objective of this research is to conduct comprehensive studies on the issues and solutions to achieve high performance III-Nitride deep ultraviolet (UV) light-emitting diodes (LEDs) and lasers emitting in the 240-300 nm regime. The research will lead to electrically-injected deep UV emitters applicable for homeland security, water purification, environmental sensing, and biochemical agent detection. The program allows graduate and undergraduate students to be trained in multidisciplinary research, encompassing the physics of semiconductor optoelectronics materials and devices, material physics and epitaxy, semiconductor nanostructures, and device design and fabrications. The program will enable the training for two PhD students in III-Nitride technologies, which is critical for both deep UV emitters and solid state lighting applications. The approach pursued in this program is to exploit a new method by introducing a nanoscale layer to achieve valence subband arrangement in the active regions, which will result in improved optical gain and spontaneous emission rate, as well as the ability to control the polarization of the emission in the mid and deep UV spectral regimes. The material development and epitaxy of novel AlGaN-based and AlInN-based quantum wells with large optical gain, specifically for achieving high performance deep UV LEDs and lasers, will be pursued. The implementation of these novel quantum wells in device structures will be pursued for achieving high-performance electrically-injected III-Nitride deep UV emitters.