Basic research on optical communication wavelength inter-subband transition of III-nitride semiconductors

III族氮化物半导体光通信波长子带间跃迁基础研究

• 批准号: 14205057
• 负责人: KISHINO Katsumi
• 金额: $ 34.78万
• 依托单位: Sophia University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205057/
• 关键词: inter subband transition; Gallium nitride; Aluminum nitride; molecular beam epitaxy; optical communication; multiple quantum well; optical integrated circuit; pump-probe technique; 超格子

The characteristics of intersubband transition in III-nitride quantum wells (QWs) are promising for ultra-high speed optical communication devices such as detectors, modulators and all-optical switches.In this research project, clear optical absorption and ultra-fast absorption relaxation were demonstrated by GaN/AlN MQW crystals which grown by rf-plasma assisted molecular beam epitaxy (RF-MBE).First of all, we have optimized a growth condition of AlN buffer layer by RF-MBE and atomically flat AlN was obtained on sapphire substrate then growth condition of GaN/AlN MQW was optimized, consequently high quality GaN/AlN ISBT crystal could be obtained. We also carried out systematic investigation of FWHM of ISBT absorption spectra dependence on in-plan distribution of GaN well layer thickness and surface roughness RMS value.The carrier relaxation dynamics was investigated by two-color pump-probe technique in a wide energy range around 800 meV (1.55μm). The observed relaxation time was composed by ultra-fast 140 fs component and slow 1.3 ps one. Carrier relaxation model was constructed considering a phase space filling of the upper subband and a carrier cooling process in the lower subband.All-optical modulation using 1.55 pm ISBT resonant induced by UV interband (IBT) resonant light (325 nm or 213 nm) was demonstrated by GaN/AlN MQW waveguide device.The growth condition of GaN based nanocolumns including GaN/AlN MQW was developed and optical properties were investigated. The ISBT absorption at 1.55μm was observed for nanocolumns for the first time.In-rich InGaN is an attractive candidate for ISBT material at optical communication wavelength due to large conduction band offset between GaN and AlN. We have demonstrated the growth of high quality In-rich InGaN by RF-MBE.

III族氮化物量子威尔斯（QWs）的子带间跃迁特性在超高速光通信器件如探测器、调制器和全光开关等方面具有广阔的应用前景。优化了AlN缓冲层的RF-MBE生长条件，在蓝宝石衬底上获得了原子级平整的AlN，进而优化了GaN/AlN多量子阱的生长条件，获得了高质量的GaN/AlN ISBT晶体。系统地研究了ISBT吸收谱的半高宽与GaN阱层厚度面内分布和表面粗糙度RMS值的关系，并利用双色泵浦探测技术研究了800 meV（1.55μm）附近宽能量范围内载流子的弛豫动力学。观测到的弛豫时间由超快的140 fs分量和慢的1.3 ps分量组成。建立了考虑上子带相空间填充和下子带载流子冷却的载流子弛豫模型。紫外带间（IBT）共振光诱导1.55pm ISBT共振全光调制（325 nm或213 nm）的GaN/AlN多量子阱波导器件，研究了GaN基纳米柱（包括GaN/AlN纳米柱）的生长条件。研制了AlN多量子阱并对其光学性能进行了研究。首次观察到纳米柱在1.55μm处的ISBT吸收，由于GaN和AlN之间较大的导带偏移，富In InGaN是光通信波段ISBT材料的理想候选材料。我们已经展示了高品质的富In InGaN的RF-MBE生长。

项目成果

Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells

• DOI: 10.1063/1.1647275
• 发表时间: 2004-02-16
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Hamazaki, J;Matsui, S;Kishino, K
• 通讯作者: Kishino, K

J.Hamazaki et al.: "Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple quantum wells"Applied Physics Letters. 84・7. 1102-1104 (2003)

J. Hamazaki 等人：“GaN/AlN 多量子阱中 1.55 μm 处的超快子带间弛豫和非线性磁化率”应用物理快报 84・7 (2003)。

J.Hamazaki et al.: "Ultrafast intersubband relaxation at 1.55 μm in GaN/AlN MQWs"Proceedings of the 5th Pacific Rim Conference on Lasers and Electro-optics. 2. 548 (2003)

J. Hamazaki 等人：“GaN/AlN MQW 中 1.55 μm 处的超快子带间弛豫”第五届环太平洋激光和电光会议论文集 2. 548 (2003)。

浜崎 淳一 他: "GaN/AlN多重量子井戸におけるサブバンド間遷移の吸収飽和と高速緩和過程"日本物理学会2003年度秋季大会 講演予稿集. 21p-SB-2 (2003)

Junichi Hamasaki 等人：“GaN/AlN 多量子阱中子带间跃迁的吸收饱和和快速弛豫过程”日本物理学会 2003 年秋季会议论文集 21p-SB-2 (2003)。

後藤芳雄 他: "1.55μm光通信波長AlGaN/GaN方向性結合器の作製"第63回応用物理学会学術講演会 講演予稿集. 24p-B-5 (2002)

Yoshio Goto 等：“1.55 μm 光通信波长 AlGaN/GaN 定向耦合器的制作”第 63 届日本应用物理学会年会论文集 24p-B-5 (2002)。