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Design and Characterisation of Basic Components for 160 Gbit/s Data Rate in 0.13 µm SiGe:C Hetero Bipolar Technology

Design and Characterisation of Basic Components for 160 Gbit/s Data Rate in 0.13 µm SiGe:C Hetero Bipolar Technology
采用 0.13 µm SiGe:C 异质双极技术实现 160 Gbit/s 数据速率的基本组件的设计和表征
批准号:
219211669
负责人:
Professor Dr.-Ing. Andreas Thiede
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2012
资助国家:
德国
项目状态:
已结题
起止时间:
2011-12-31 至 2016-12-31

项目摘要

项目成果

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中文摘要
翻译
拟议项目的主题是关键部件的开发,这些部件首次能够通过电子手段实现高达160Gbit/S的数据速率。该项目基于国际水文计划最近发布的SG13G2技术,供学术使用。在与集成电路设计密切相关的背景下,由于没有合适的商业测量设备,需要设计测试方法。在第一项目阶段,将开发锁相环及其关键部件压控振荡器和分频器。在此基础上,最终项目年将设计出用于产生160Gbit/S数据流的复用器。
英文摘要
Subject of the proposed project is the development of key components, which enable data rates up to 160 Gbit/s by electronic means for the first time. The project is based on the SG13G2 technology of IHP, which was released for academic access recently. In close context with integrated circuit design, test methods are to be devised, because appropriate commercial measurement equipment is not available.In the first project phase, a PLL, and as its essential parts a VCO and frequencydivider, are to be developed.On this basis, a multiplexer for the generation of 160 Gbit/s data streams istargeted in the final project year.
期刊论文(5)
专著(0)
科研奖励(0)
会议论文
An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology
采用 0 13 µm SiGe BiCMOS 技术的集成 118 4 至 122 GHz 低噪声锁相环 (PLL)
DOI: 10.1109/gemic.2016.7461611
发表时间: 2016
期刊: 2016 German Microwave Conference (GeMiC)
影响因子: --
作者: [U. Ali, M. Bober, A. Thiede]
通讯作者: A. Thiede
Design of voltage controlled oscillators (VCOs) in D-band and their phase noise measurements using frequency down-conversion
D 频段压控振荡器 (VCO) 的设计及其使用下变频的相位噪声测量
DOI: 10.1109/eumic.2016.7777554
发表时间: 2016
期刊: 2016 11th European Microwave Integrated Circuits Conference (EuMIC)
影响因子: --
作者: [U. Ali, M. Bober, A. Thiede]
通讯作者: A. Thiede
Integrated sensor for electro-magnetic near-field scanning
Schnelle Datenregeneratoren für die hochbitratige opto-elektronische Datenübertragung basierend auf Silizium-CMOS-Technologie
海外基金