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CAREER: Opportunistic Through-Silicon-Via Utilization: Device, Circuit and Design Automation Perspectives

CAREER: Opportunistic Through-Silicon-Via Utilization: Device, Circuit and Design Automation Perspectives
职业:机会性硅通孔利用:器件、电路和设计自动化视角
批准号:
1559026
负责人:
Yiyu Shi
金额:
$37.56万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2015
资助国家:
美国
项目状态:
已结题
起止时间:
2015-09-01 至 2019-02-28

项目摘要

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中文摘要
翻译
三维集成电路(3D IC)使用通硅过孔(tsv)在垂直尺寸上堆叠多个晶片,从而显着降低了占地面积,功耗和延迟。虽然与3D集成电路相关的许多挑战仍然存在,但该项目针对的一个挑战将在未来5到10年内变得越来越重要,并可能结束3D集成电路的生产:tsv的尺寸相当大,但由于晶圆处理和长宽比的限制,它们的直径不能与设备成比例。另一方面,需要大量的tsv来传递信号和电源,散热和提供冗余。此外,铸造厂在化学和机械抛光(CMP)期间施加最小TSV密度规则以保持晶圆的平面度。这个项目通过重新配置空闲的tsv作为各种电路和系统的设备来解决这个挑战。本文还将提出一种机会性计算机辅助设计(CAD)框架,以实现TSV器件的最佳利用。拟议的研究将为3D集成电路在所有设计层面(器件,电路和CAD)的进步开辟一个新的和变革性的方向,而不需要改变当前的半导体工艺。PI还将利用与工业技术研究所的合作,为美国本科生和毕业生建立一个广泛的国际实习计划,这将有利于一般的3D集成电路研究界。此外,PI还将在研究框架内为本科生和少数族裔开展各种活动,为罗拉当地高中生举办3D俄罗斯方块比赛,并为3D IC社区的合作研究建立一个基于web 2.0的3D论坛。
英文摘要
The three-dimensional integrated circuit (3D IC) stacks multiple dies in the vertical dimension using Through-Silicon-Vias (TSVs), which results in significantly reduced footprint, power and latency. While many challenges still exist related to 3D ICs, this project targets the one challenge that will become increasingly important in the next 5 to 10 years and may potentially end the production of 3D ICs: TSVs are quite large in size, yet their diameters do not scale with the devices due to the limitations of wafer handling and aspect ratios. On the other hand, a large number of TSVs are needed to deliver signal and power, to dissipate heat, and to provide redundancy. Moreover, foundries impose a minimum TSV density rule to maintain the planarity of the wafer during chemical and mechanical polishing (CMP). This project tackles the challenge by reconfiguring idle TSVs as devices for various circuits and systems. An opportunistic computer-aided design (CAD) framework will also be put forward for optimum utilization of the TSV devices. The proposed research will pioneer a new and transformative direction for the advancement of 3D ICs at all the design levels - devices, circuits and CAD - with no change required in current semiconductor processes. The PI will also leverage the collaboration with Industrial Technology Research Institute to set up an extensive international internship program for U.S. undergraduates and graduates, which will benefit the general 3D IC research community. In addition, the PI will develop various activities for undergraduates and underrepresented minorities within the research framework, full-filled 3D Tetris contests for Rolla local high school students, and a web 2.0-based 3D forum for collaborative research in the 3D IC community.
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会议论文
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海外基金