Compact modeling and characterization of carbon nanotube field-effect transistors and analog high- frequency circuit design

碳纳米管场效应晶体管(CNTFET)因其高的本征迁移率和极低的单管电容而成为高速模拟器件应用的一种有吸引力的技术。首先，具有中等布局尺寸和通道内多个管的高频器件可能很快就可以在商业上买到。然而，为了探索碳纳米管技术在应用中的独特特性，迫切需要一个基于物理和几何可扩展的紧凑型模型来实现电路设计和性能优化。为可制造的CNTFET推导、实验验证和实现这样的模型是本项目的主要目标。为了实现这一目标，将对制造的先进CNTFET进行广泛的实验表征(包括小信号和大信号)，并将现有器件模拟基础设施的结果用作紧凑模型开发的起点。作为先决条件，已经与一家工业合作伙伴建立了合作关系，提供从基于步进器的制造到GHz CNTFET的接入。本项目将通过开发适合于研究CNTFET在高频模拟电路中的实际潜力的器件建模和仿真能力，来弥合目前基础研究(物理、化学)和实际应用(电气工程)之间的差距。

Carbon nanotube field-effect transistors (CNTFETs) are an attractive technology for high-speed analog device applications due to their high intrinsic mobility and very low capacitance per tube. First high-frequency devices with moderate layout dimensions and multiple tubes within the channel may soon be available commercially. However, to explore the unique features of carbon nanotube technology in applications a physics-based and geometry scalable compact model is urgently needed to enable circuit design and performance optimization. Deriving, experimentally verifying, and implementing such a model for manufacturable CNTFETs is the main goal of the present project. To achieve this goal, fabricated advanced CNTFETs will be extensively characterized experimentally (both small- and large-signal) and results of an existing device simulation infrastructure will be used as a starting point for the compact model development. As prerequisite, a collaboration with an industrial partner has been established that provides access to GHz CNTFETs from a stepper-based fabrication. The present project will bridge the presently existing gap between basic research (physics, chemistry) and practical applications (electrical engineering) by developing device modeling and simulation capabilities that are suitable for investigating the actual potential of CNTFETs in high-frequency analog circuits.