Modular Electronic Devices by Selective Co-axial Lithography of Nanowire Semiconductors

该项目为医疗保健、能源和纺织品应用的柔性电子设备的制造提供了新的基本见解。现有的材料和当前的制造方法目前无法生产出具有所需电气性能的柔性基板。该奖项旨在研究一种先进的制造工艺，以实现具有理想的低电压（1v）和高工作频率（1ghz）的模块化晶体管的增材制造。这项研究结合了化学工程、材料科学和电气工程的概念，为各种新的电子技术奠定了基础，确保美国在电子制造业中保持竞争优势。该合作项目为一名研究生提供了多学科的培训机会，该团队的播客名为Nanovation，作为讨论该项目核心的纳米制造概念的论坛，并在此过程中引起公众和研究人员的兴趣。该研究项目旨在开发一种增材纳米制造工艺，以制造模块化、高性能场效应晶体管。这项工作协同结合了自下而上的半导体晶体生长和一种新的选择性同轴光刻方法，在单晶亚微米通道上模板自对准栅极堆栈。具体来说，研究小组推进了对同轴光刻方法的理解，开发了兼容的区域选择性沉积工艺，以实现低缺陷密度的栅极堆叠，并电接触并表征了所得到的纳米电子器件。每个步骤的结构和电气特性提供反馈，以推进工艺和器件设计。成功激发了重要的下一步，例如，模块化器件的放置和互连，以形成功能电路。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

This project provides new fundamental insights into the manufacturing of flexible electronic devices for applications in healthcare, energy, and textiles. Existing materials and current manufacturing approaches cannot presently produce flexible substrates with the needed electrical performance. This award investigates an advanced manufacturing process to enable the additive fabrication of modular transistors with desirable low voltages ( 1 V) and high operating frequencies ( 1 GHz). This research combines concepts from chemical engineering, materials science, and electrical engineering, and sets the stage for a variety of new electronic technologies that ensure the U.S. maintains its competitive edge in electronics manufacturing. The collaborative project offers multidisciplinary training opportunities for one graduate student and the team's podcast, called Nanovation,serves as a forum to discuss the nanomanufacturing concepts central to this project and, in doing so, generate interest among the general public and researchers alike. This research project seeks to develop an additive nanomanufacturing process to fabricate modular, high-performance field-effect transistors. The work synergistically combines bottom-up semiconductor crystal growth with a new selective coaxial lithography method to template a self-aligned gate stack on a single-crystalline, sub-micron channel. Specifically, the research team advances the understanding of the coaxial lithographic method, develops compatible area-selective deposition processes to achieve a low defect density gate stack, and electrically contacts and characterizes the resulting nanoelectronic devices. Structural and electrical characterization at each step provides feedback with which to advance the process and device designs. Success motivates important next steps, such as, the placement and interconnection of modular devices to form functional circuitry.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.