CAREER: Two-Dimensional Straintronic Field Effect Transistor

提案编号：2042154主要研究员：Saptarshi Das职称：职业：二维应变场效应晶体管机构：宾夕法尼亚州立大学园区非技术摘要：节能计算将彻底改变下一代智能和安全的电子设备，并使现代社会的所有部门受益，包括农业，医疗保健，自动化，通信，国防和基础设施。事实上，有望在大数据、遥感、物联网（IoT）等方面蓬勃发展的21世纪世纪需要新型设备，这些设备可以以如此节约的电力运行，以至于环境能量收集可以满足所有需求。传统的基于硅的互补金属氧化物半导体技术不足以实现这些需要新材料发现和器件级创新的目标。这可以在二维应变场效应晶体管中通过利用二维材料的独特性质来实现，即应变诱导的动态带隙工程并将其与压电纳米换能器集成，这将在拟议的研究中进行探索。技术摘要该提案的目的是实验证明陡斜率开关在二维应变场效应晶体管（2D SFET）利用在操作和单轴应变工程在2D过渡金属二硫属化物（TMDC）。2D SFET可以克服传统金属氧化物半导体场效应晶体管（FET）中玻尔兹曼统计所施加的热力学限制，并且在室温下实现低于60 mV/十倍的亚阈值摆幅沿着高导通状态性能。实现2D SFET需要基于2D TMDC的FET与基于压电（PE）陶瓷的纳米换能器的单片集成。PE响应于所施加的栅极偏置而膨胀，并且转换2D沟道材料上的面外应力，从而减小其带隙。其结果是内部电压放大，导致陡斜率开关。虽然静态，面内和双轴应变用于传统的硅技术，动态应变工程是一个相对未知的领域。因此，基于新型2D TMDC的新型应变电子器件的探索将为解决关键计算需求和重大工程挑战的先进概念增加新的基础知识。此外，所提出的应变平台将提供令人兴奋的机会来开发新的概念，包括用于脑启发计算的应变神经元形态设备（SND），用于内存计算的应变记忆设备（SMD），和应变电子安全设备（SSD）该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的评估，被认为值得支持。影响审查标准。

Proposal Number: 2042154Principal Investigator: Saptarshi DasTitle: CAREER: Two-Dimensional Straintronic Field Effect TransistorInstitution: Pennsylvania State Univ University ParkNontechnical Abstract:Energy efficient computing will revolutionize next generations of smart and secure electronic devices, and benefit all sectors of modern society including agriculture, healthcare, automation, communication, defense, and infrastructure. In fact, the 21st century, which promises to thrive on big data, remote sensing, Internet-of-Things (IoT) and so on, demands novel devices, which can operate with power so frugal that ambient energy harvesting may accommodate all of their needs. The conventional silicon based complementary metal oxide semiconductor technology is inadequate for achieving such goals necessitating novel material discovery and device level innovations. This may be achieved in two-dimensional straintronic field effect transistors by utilizing a unique property of two-dimensional materials, namely, strain induced dynamic bandgap engineering and integrating it with piezoelectric nanotransducers, which will be explored in the proposed research. Technical AbstractThe aim of the proposal is to experimentally demonstrate steep slope switching in two-dimensional straintronic field effect transistors (2D SFET) exploiting in-operando and uniaxial strain engineering in 2D transition metal dichalcogenides (TMDCs). The 2D SFET can defy the thermodynamic limit imposed by Boltzmann statistics in conventional metal oxide semiconductor field effect transistors (FET) and achieve sub-60mV/decade subthreshold swing at room temperature along with high on-state performance. Realization of 2D SFET requires monolithic integration of 2D TMDC based FETs with piezoelectric (PE) ceramic based nanotransducers. The PE expands in response to an applied gate bias and transduces an out-of-plane stress on the 2D channel material reducing its bandgap. The result is an internal voltage amplification that leads to steep slope switching. While static, in-plane, and biaxial strain is used in conventional silicon technology, dynamic strain engineering is a relatively uncharted territory. Consequently, exploration of novel straintronic devices based on novel 2D TMDCs will add new fundamental knowledge towards advancing concepts for resolving critical computing needs and grand engineering challenges. Furthermore, the proposed straintronic platform will offer exciting opportunities to develop novel concepts including straintronic neuromorphic devices (SNDs) for brain-inspired computing, straintronic memory devices (SMDs) for in-memory computing, and straintronic security devices (SSDs) for secure computing.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.