Collaborative Research: FuSe: GeSnO2 Alloys for Next-Generation Semiconductor Devices

非技术描述：该项目汇集了密歇根大学和明尼苏达大学的物理、化学、材料科学和电气工程科学家团队，共同设计基于锡和锗元素氧化物的电子材料和器件。它回答了基本的科学问题，以了解如何才能以足够高的质量生长这些材料，以及如何通过改变它们的组成来控制它们的导电性。该项目有可能改变用无毒元素制造的快速、紧凑和节能电子设备的发展，促进电动汽车和智能电网等应用，并刺激美国的经济增长。主要研究人员通过制定课程、指导本科生和博士生、举办暑期班以及与支持本科生研究的项目合作等举措，促进多样性并扩大研究生教育机会。技术描述：该项目支持基于二氧化锗和金红石结构中二氧化锡合金的超宽带隙半导体材料和电子器件的联合设计研究活动。研究活动结合了理论、薄膜生长、结构和电学表征以及器件制造，重点是(1)高质量薄膜的开发，(2)n型和p型掺杂的演示，(3)高质量电接触的开发，(4)对低场和高场电传输的了解，以及(5)原型功率器件的制造。这项研究旨在推进氧化物半导体材料的科学和工程，以共同设计原型器件并加速节能电子产品的制造。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

Non-technical Description:This project brings together a team of scientists in physics, chemistry, materials science, and electrical engineering at the University of Michigan and the University of Minnesota to co-design electronic materials and devices based on oxides of the elements tin and germanium. It answers fundamental scientific questions to understand how these materials can be grown with sufficiently high quality and how their electrical conductivity can be controlled by modifications to their composition. The project has the potential to transform the development of fast, compact, and energy-efficient electronic devices manufactured with non-toxic elements, to catalyze applications such as electric vehicles and smart electricity grids, and to stimulate economic growth in the US. The principal investigators promote diversity and expand graduate education opportunities through initiatives such as developing curricula, mentoring undergraduate and PhD students, hosting summer schools, and collaborating with programs that support undergraduate research.Technical Description:This project supports research activities on the co-design of ultra-wide-band-gap semiconductor materials and electronic devices based on alloys of germanium dioxide with tin dioxide in the rutile structure. The research activities combine theory, thin-film growth, structural and electrical characterization, and device fabrication, and focus on (1) the development of high-quality thin films, (2) the demonstration of n-type and p-type doping, (3) the development of high-quality electrical contacts, (4) the understanding of low- and high- field electrical transport, and (5) the fabrication of prototype power devices. The research aims to advance the science and engineering of oxide semiconductor materials in order to co-design prototype devices and accelerate the manufacturing of energy-efficient electronics.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.