High-speed flexible transistors and tunnel diodes and circuits based on them

这项建议的目的是开发新型高速电子设备，用于集成到以可扩展工艺制造的柔性基板中，这些柔性基板适合通过以下活动作为高速无线通信电路的部件：合成：合成部分侧重于(高迁移率)半导体聚合物。将测试几类具有良好能级排列的材料。有希望的材料将在溶解度和工艺条件方面进行优化，以应用于隧道二极管和TFT。TFT：对于一些有前景的材料，高速p沟道有机TFT器件(TYP.为降低寄生电容，将制备具有自对准光刻图案的D/S电极，并对其高频特性进行表征。将开发基于平面器件几何结构的互补型、高速n沟道金属氧化物TFT。为了克服平面器件布局的几何限制，将利用原子层沉积的特殊优点来制备短沟道金属氧化物垂直TFT，以制备电极、介质和沟道材料。基于这一概念，我们预计将把FT推向&gt；2 GHz区域。基于高速TFT的放大电路的设计和实现是本文的另一个主题。隧道二极管：这部分的主题是有机隧道二极管的制作和优化，以期在高速压控振荡器中实现。选择合适的聚合物半导体的关键性能指标是高峰谷比、振荡和1 GHz、在低V时的NDR起始和最大输出电流。振荡器：这部分专注于开发一种基于GHz范围内柔性有机隧道二极管的压控振荡器。为了设计和实现射频传输电路，将结合各个构建块。

The aim of this proposal is the development of novel high-speed electronic devices for integration into flexible substrates made in scalable processes that are suitable as components of circuits for high-speed wireless communication through the following activities: Synthesis: The synthesis part is focused on (high mobility) semiconducting polymers. Several classes of materials with a favorable energy level alignment will be tested. Promising materials will be optimized in terms of solubility and processing conditions for application in tunnel diodes and TFTs.TFT: For a few promising materials high-speed p-channel organic TFT devices (typ. 1 µm) with self-aligned lithographically patterned D/S electrodes for lowered parasitic capacities will be prepared and characterized for their high-frequency characteristics. Complementary, high-speed n-channel metal-oxide based TFTs in planar device geometry will be developed. To overcome geometrical limitations of the planar device layout, short channel metal-oxide based vertical TFTs will be prepared using the specific benefits of atomic layer deposition for the preparation of electrodes, dielectrics and channel material. Based on this concept, we expect to push ft into the region > 2 GHz. Design and realization of amplifier circuits based on high-speed TFTs is another topic in this proposal.Tunnel diodes: Topic of this part is the fabrication and optimization of organic tunnel diodes with a view to implementation in high-speed voltage-controlled oscillators. Key performance targets in the selection of suitable polymeric semiconductors are high peak to valley ratio, oscillation > 1 GHz, onset of NDR at low V and maximized output current.Oscillator: This part is focused on the development of a voltage-controlled oscillator based on a flexible organic tunnel diode in the GHz range. The individual building blocks will be married for the design and realization of a RF transmission circuit.