Honeycomb nitrides layers as playground for Xenes formation
Honeycomb nitrides layers as playground for Xenes formation
批准号:
21K04883
负责人:
Anton V.Visikovs
金额:
$2.75万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2021
资助国家:
日本
项目状态:
已结题
起止时间:
2021-04-01 至 2024-03-31
中文摘要
(1)在此期间,我们成功地在SiC(0001)表面生长了蜂窝状的2D氮化硅层。通过低能电子衍射(LEED)分析确定了表面的结构,并与先前通过计算预测的结构相匹配。扫描隧道显微镜(STM)的测量结果也证实了这一点。(2)根据研究计划,我们还打算尝试使用SiC的相邻阶梯表面生长纳米结构。基于此,我们研究了相邻SiC的形貌和台阶动力学。这伴随着对表面上石墨烯生长的研究。(3)新的计算方法(紧束缚模型与展开能带结构计算)正在开发中,以深化见解。
英文摘要
(1) During this research period we have successfully grown honeycomb 2D silicon nitride layer on SiC(0001) surface. The structure of the surface has been determined by low-energy electron diffraction (LEED) analysis and match the one previously predicted by calculation. The results are also confirmed by scanning-tunneling microscopy (STM) measurements.(2) According to research plan we intended also to try the growth of nanostructures using vicinal stepped surfaces of SiC. In anticipation of it, we have investigated the morphology and step dynamics of vicinal SiC. This was accompanied with study of graphene growth on the surface.(3) New computational approaches (tight-binding models with unfolded band structure calculations) are in development to deepen insights.
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