Developing Semi-Insulating Silicon Carbide Epitaxy

微电子设备技术-物理科学该项目旨在开发应用于射频和微波电子行业的碳化硅(碳化硅)半绝缘材料。它将包括材料特性和设备建造，所有这些都使用华威的设施。制造碳化硅半绝缘材料的特殊方法是在沃里克材料设施中引入新的前驱体，由现有的沃里克员工进行。学生将使用显微镜和基本的电学测试来开发确定厚的半绝缘层的表征技术。必须控制连锁效应，不得转移到系统中制造的其他材料(例如，自动掺杂、记忆效应、扩散性、偏析等)。这将经历许多循环，学生将通过控制方法的纯度、前体、压力、质量流量、温度等参数来改进材料制造系统。然后，学生将使用标准的构建过程在开发的平台上构建设备。这将导致新技术的出现，这些技术可能会被包括在许多射频和微波电子领域。

Microelectronic device technology - Physical SciencesThe project aims to develop Silicon Carbide (SiC) semi-insulating materials for application in the RF and microwave electronics industry. It will consist of materials characterisation and device construction, all using facilities at Warwick. The particular method to construct SiC semi-insulating materials is by the introduction of new precursors in the materials facility Warwick, to be performed by existing Warwick staff. The student will develop the characterisation techniques to define a thick semi-insulating layer using microscopy and basic electrical testing. Knock-on effects must be controlled without transferring to other materials made in the system (e.g. autodoping, memory effect, diffusivity, segregation etc.). This will undergo many loops with the student contributing to improving the material fabrication system by parameters such as purity of control methodology, precursor, pressure, mass flow, temperature etc. Then, the student will construct devices on the developed platform utilising a standard construction process. This will result in new technologies, which could be included in many RF and microwave electronics areas.