Modeling and simulation of memristive devices and systems

根据在第一个资助期内发现的结果，计划开发一个忆阻系统的通用混合仿真模型，即电网内的忆阻装置。术语“混合”表明该设备是由三维多物理模型描述的，该模型允许在原子尺度上实际传输现象，而电气网络是在类似spice的环境框架中描述的。这两种本质上不同的方法必须一致地结合在一起。项目的第一部分旨在提供一个更深入的了解实际的电阻开关现象在丝状和非丝状器件。一个主要的焦点是cmos兼容的基于hfo的记忆器件。第二部分是将忆阻器件的物理混合模型作为核心元件应用到电路中。在这种情况下，基本记忆电路将被研究。振荡器的同步是本课题的重点。

Based on the results found within the first funding period it is planned to develop a generic hybrid simulation model for memristive systems, i.e., the memristive device within the electrical network. The term "hybrid" indicates that the device is described by a three-dimensional multiphysical model which allows for the actual transport phenomena on the atomic scale, whereas the electrical network is described in the frame of a SPICE-like environment. The two inherently different approaches have to be coupled consistently. The first part of project is intended to provide a deeper understanding of the actual resistive switching phenomena in both the filamentary and non-filamentary devices. One major focus is on the CMOS-compatible HfO-based memristive device. The second part is to apply the physical hybrid models of the memristive devices as core elements in electrical circuits. In this context basic memristive circuits will be studied. The synchronization of oscillators are in the focus of this task.