Mass production of semiconducting atomic-layer materials

研究了通过锂嵌入对MoS2和WS2进行化学剥离以制备原子层材料用于有效的大规模生产。用透射电镜对剥离后的材料进行了结构分析，明确了金属相（1T）和半导体相（2H）的共格界面。在WS_2原子层样品中，发现了具有迷宫状晶格结构的金属超晶格相（1T '），剥离后的WS_2和MoS_2原子层样品具有与Pt相当的析氢催化性能。这种高的催化活性来自于导电金属相（1T）和超晶格诱导的局部应变产生的活性位。

Chemical exfoliation of MoS2 and WS2 by using lithium intercalation has been investigated to make atomic-layer materials for efficient mass production. The structural analysis for exfoliated materials was performed by transmission electron microscope, and the coherent interface of metallic phase (1T) and semiconducting phase (2H) was clarified. In the WS2 atomic-layer sample, the metallic superlattice phase (1T') showing the mazing lattice patterns was found. The exfoliated WS2 and MoS2 atomic-layer samples have high catalytic capability of hydrogen evolution reaction, compatible to that of Pt. This high catalytic activity comes from the conducting metallic phase (1T) and the active sites from local strain induced by the superlattice.