Full photon statistics of collective effects in semiconductor nanostructures

嵌入光学微腔中的半导体纳米结构对于腔增强纳米光子器件的基础研究及其在光子量子技术等方面的未来应用具有重要意义。研究和理解少光子操作和集体效应不仅需要分析发射光强，而且需要分析二阶光子自相关函数。这两个量构成光子统计量的前两个矩。为了全面的表征和理解，获得完整的光子统计数据是非常有益的，这相当于知道所有的矩。利用光子数解析跃迁边缘传感器，我们打算测量并从理论上分析特别设计的半导体量子点系统的全光子统计数据，这些系统表现出集体效应：(i)均匀介质和光学微柱中的超辐射量子点；（ii）具有量子点增益的双峰微柱激光器。在这两种情况下，我们应用了一种先进的确定性生长技术来控制参与集体发射过程的量子点的数量和位置。对于后者，我们打算探索光子统计特别是在一个所谓的例外点，这是一个光谱奇点在开放系统中引起了极大的关注。

Semiconductor nanostructures embedded into optical microcavities are of enormous interest both for fundamental research of cavity-enhanced nanophotonic devices and their future applications for instance in photonic quantum technology. The study and understanding of few-photon operation and collective effects require an analysis of not only the emitted light intensity but also the second-order photon autocorrelation function. Both quantities constitute the first two moments of the photon statistics. For a comprehensive characterization and understanding it is highly beneficial to have access to the full photon statistics, which would equivalent of knowing all moments. Using photon-number resolving transition edge sensors we intend to measure and theoretically analyze the full photon statistics of specifically designed semiconductor quantum dot systems exhibiting collective effects: (i) superradiant quantum dots in an homogeneous medium and in optical micropillars and (ii) bimodal micropillar lasers with quantum dot gain. In both cases we apply an advanced deterministic growth technique to control the number and position of the quantum dots involved in the collective emission process. For the latter we intend to explore the photon statistics in particular at a so-called exceptional point, which is a spectral singularity in open systems that attracted great attention recently.