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Advanced Gallium Nitride based Quantum Devices

先进的氮化镓基量子器件

基本信息

批准号：
259236611
负责人：
Professor Dr. Stephan Reitzenstein
金额：
--
依托单位：
Institut für Festkörperphysik
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2014
资助国家：
德国
起止时间：
2013-12-31 至 2019-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/259236611?language=en
关键词：
Advanced Gallium Nitride based Quantum

项目摘要

Within this project we will develop and study advanced GaN-based quantum devices. We will demonstrate novel concepts to manipulate the emission process of GaN quantum dots and to exploit non-linear emission processes for the generation of quantum light. This includes single photons with externally adjustable emission energy and entangled photon pairs. For this purpose we will develop nanocavity systems in the GaN material system which allow us to control and enhance the spontaneous emission of single quantum dots by cavity quantum-electrodynamics effects. As a central goal of the project we will exploit the Purcell effect in photonic crystal cavities to enhance the probability of two-photon emission processes which is negligible for bare quantum dots but can be boosted in the presence of an optical resonance of a nanocavity structure. Cavity enhanced two-photon processes will also be exploited for frequency up- and down-conversion of light at the single photon level. Moreover, we will for the first time embed single quantum dots into piezo-controlled GaN nanocavities to tune their excitonic emission energies via external strain fields.Our approach will allow us to realize compact quantum systems for the triggered emission of single photons and entangled photon pairs with adjustable energy via two photon emission processes. Here, the GaN material system is of particular interest because of large exciton binding energies and large band offsets which enable operation at elevated temperatures up to 300 K. Most importantly, GaN QDs exhibit intrinsically a parity breaking which greatly enhances two-photon processes. The results of our project will have impact on the emerging quantum information technology which relies crucially on the availability of advanced quantum light sources.

在这个项目中，我们将开发和研究先进的GaN基量子器件。我们将展示新的概念来操纵GaN量子点的发射过程，并利用非线性发射过程来产生量子光。这包括具有外部可调发射能量的单光子和纠缠光子对。为此，我们将在GaN材料系统中开发纳米腔系统，使我们能够通过腔量子电动力学效应控制和增强单量子点的自发辐射。作为该项目的中心目标，我们将利用光子晶体腔中的珀塞尔效应来增强双光子发射过程的概率，这对于裸量子点来说是可以忽略的，但在纳米腔结构的光学共振存在的情况下可以增强。还将利用腔增强型双光子过程在单光子水平上对光进行频率上转换和下转换。此外，我们将首次将单量子点嵌入到压控GaN纳米腔中，通过外部应变场来调节它们的激子发射能量。我们的方法将使我们能够通过双光子发射过程实现单光子和纠缠光子对的触发发射的紧凑量子系统。在这里，GaN材料系统特别令人感兴趣，因为它具有大的激子结合能和大的能带偏移，使其能够在高达300K的高温下运行。最重要的是，GaN量子点显示出本质上的宇称破缺，这大大增强了双光子过程。我们项目的结果将对新兴的量子信息技术产生影响，这一技术至关重要地依赖于先进量子光源的可用性。