Perspective of low energy ion beam implantation for doping of graphene

在这个项目中，我们将探索离子束注入石墨烯可控掺杂的前景。我们的目标是最大限度地提高掺杂程度，同时最大限度地减少晶格缺陷的电荷载流子散射的幅度。我们的目标是找出是否稳定的替代掺杂的好处，即控制掺杂的程度，补偿由于额外的散射过程的电荷载流子的迁移率的退化。更具体地说，我们将探索低能量离子束注入的限制，通过优化制备工艺，以及通过寻找替代掺杂剂物种。样品将通过不同的实验技术进行表征，特别是室温和低温扫描隧道显微镜和光谱学，以分析原子尺度上的缺陷，以及开尔文探针力显微镜，以确定微观尺度上的传输参数。最后，这些结果被用来探索高掺杂浓度和创建横向结构掺杂的可能性。

Within this project, we will explore the perspectives of ion beam implantation for controlled doping of graphene. Our goal is to maximize the degree of doping while minimizing the magnitude of charge carrier scattering by lattice defects. We are aiming to find out whether the benefits of stable substitutional doping, i.e. controlling the degree of doping, compensate the degradation of the mobility of charge carriers due to additional scattering processes. More specific, we will explore the limit of low energy ion beam implantation by optimizing the preparation process as well as by searching for alternative dopant species. Samples will be characterized by different experimental techniques, especially room and low temperature scanning tunneling microscopy and spectroscopy to analyze defects on the atomic scale as well as Kelvin probe force microscopy to determine transport parameters on a microscopic scale. Finally, these results are used to explore both the possibility of high doping concentration and to create laterally structured doping.