Carbom free MOMBE growth by comlete cracking of the metal organic precarsores.
Carbom free MOMBE growth by comlete cracking of the metal organic precarsores.
批准号:
02452144
负责人:
HASEGAWA Fumio
金额:
$2.05万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991
中文摘要
这项工作的目的是通过从甲基自由基和金属有机前体如TMG中去除碳来实现无碳MOMBE生长。第一次尝试是甲烷(CH_4)的完全裂解,但发现这是困难的,特别是在真空中,因为甲烷在加热器上的粘连几率太小。下一次试验是一种相反的方法:使用加热的钨(W)丝产生的原子氢从金属有机化合物中去除甲烷中的甲基自由基。这似乎是可能的,因为当少量三甲基镓(TMG)通过加热的约2000゚C的钨丝时,似乎被裂解成镓(Galan)和甲烷。但当TMG的量增加一个数量级时,发现W丝由于与破裂的镓发生反应而断裂。最后,证实了最好的方法是使用新的前驱体二甲胺镓(GaH_3-NH(CH_3)_2-DMAG)。碳浓度降低了约5个数量级:从10^<;对于DMAG在550℃下生长的薄膜,用TMG生长的薄膜的碳减少到1,2×10~(-3)cm~(-3)。DMAG在保持在-10゚C左右的情况下稳定了大约2个月。
英文摘要
The aim of this work is to achieve a carbon free MOMBE growth by removing the carbon from methyl radical the metalorganic precursors, such as TMG.The first trial was complete cracking of the methane (CH_4), but it was found that it is difficult, e13EA\ : specially in vacuum, because that the sticking probability of methane on the heater is too small. Next trial was a reverse way : removal of methyl radical from metal organic as methane using atomic hydrogen produced by a heated tungsten (W) filament13EA\ : . It seemed to be possible because TMG (Trimethy gallium) was seemed to be cracked to gallium gydride (gallan) and methane, when a small amount of TMG was passed through a heated tungsten filament of about 2000゚C.However, when the amount of TMG was13EA\ : increased one order of magnitude in order to grow GaAs, it was found that the W filament was broken due to a reaction with the cracked gallium.Finally, it was confirmed that the best way is to use a new precursor, dimethyl amine gallan (GaH_3-NH(CH_3)_2--DMAG), which has no direct bond between Ga and C.the carbon concentration was reduced by about 5 orders of magnitudes : from 10^<20> c13EA\ : m^<-3> for the film grown with TMG to 1,2x10^<15> cm^<-3> for the film grown by DMAG at 550C.The carbon reduction was also confirmed by photoluminescence. The DMAG was stable for about 2 months as far as it was kept at about -10゚C.
期刊论文(9)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
R.Kobayashi,K.Fujii and F.Hasegawa: "Etiching of GaAs and AlGaAs by H^* Radical Produced by a Tungsten Filament." 1991(18th)Int.symp.GaAs and Related Compounds.(Inst.of Phys.,Conf.Ser.No120,Bristol,1992). 120. 43-48 (1992)
R.Kobayashi、K.Fujii 和 F.Hasekawa:“通过钨丝产生的 H^* 自由基蚀刻 GaAs 和 AlGaAs”。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
R.Kobayashi, K.Fujii and F.Hasegawa: "Etching of GaAs and AlGaAs by H^<**> radical produced with a tungsten" Inst.Phys.Conf.Ser.No.120 Proc.of GaAs and Related Compounds, Seattle. No.120. 43-48 (1992)
R.Kobayashi、K.Fujii 和 F.Hasekawa:“用钨产生的 H^<**> 自由基蚀刻 GaAs 和 AlGaAs”Inst.Phys.Conf.Ser.No.120 Proc.of GaAs 和相关化合物,
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
K.Ishikura, K.Hayashi T.Ogawa and F.Hasegawa: "Low carbon doped MOMBE using Dimethyl-Amine-Gallan" To be submitted to Japan. J.Appl.Phys.(1993)
K.Ishikura、K.Hayashi T.Okawa 和 F.Hasekawa:“使用二甲胺-加仑的低碳掺杂 MOMBE” 提交给日本。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
K.Ishikura,K.Hayashi T.Ogawa and F.Hasegawa: "Low carbon doped MOMBE using Dimethyl-Amine-Gallan" Tobe submitted to Japan.J.Appl.Phys.(1993)
K.Ishikura、K.Hayashi T.Okawa 和 F.Hasekawa:“使用二甲胺-加仑的低碳掺杂 MOMBE”Tobe 提交给 Japan.J.Appl.Phys.(1993)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
R.kobayashi,K.Fujii and F.Hasegawa: "Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament" Japan.J.Appl.Phys.30. L1447-L1449 (1991)
R.kobayashi、K.Fujii 和 F.Hasekawa:“通过钨丝产生的原子氢蚀刻 GaAs”Japan.J.Appl.Phys.30。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 7 条
Investigation of a solar battery using the environmentally friendly semiconductor : beta-FeSi_2
-
批准号:12450137
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$6.21万
-
财政年份:2000
-
负责人:HASEGAWA Fumio
-
依托单位:
Fabrication of single crystalline bulk GaN substrates using GaAs as seed crystals
-
批准号:09555002
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$5.89万
-
财政年份:1997
-
负责人:HASEGAWA Fumio
-
依托单位:
Fabrication of single crystalline bulk GaN substrates using GaAs as seed crystals
-
批准号:09450121
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$5.44万
-
财政年份:1997
-
负责人:HASEGAWA Fumio
-
依托单位:
Preparation and properties of Hetero-junctions between PtSi or p-Si and p-Si/Ge strained superlattice
-
批准号:04452168
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$2.24万
-
财政年份:1992
-
负责人:HASEGAWA Fumio
-
依托单位:
海外基金