Fabrication of Functional Heteroepitaxial Layers Embedding Devices

III-V化合物半导体被用于激光二极管等光电子器件和高电子迁移率晶体管等微波器件。它们是通信和信息终端的关键材料。另一方面，第四元素的硅(Si)半导体已被广泛用作包括计算机在内的电子系统的LSI。如果将这两种半导体结合成一个芯片，就可以开发出新的器件。尽管有许多研究，但在硅衬底上生长III-V化合物半导体时，会产生大量的晶体缺陷，特别是位错。这是由于价电子数目的不同、晶格常数和热膨胀系数的巨大差异造成的。然后，新的设备还没有被开发出来。在这项研究工作中，我们试图通过研究晶格常数和…的失配来在硅衬底上生长无位错的III-V化合物半导体由于价电子数不同而引起的热膨胀系数增加，我们已经解决了这一问题。通过在硅衬底上生长GaPn和GaAsPn的III-V-N化合物半导体，尝试了晶格匹配。由于热膨胀系数的不同，硅覆盖层有望抑制生长后冷却阶段引入的热应变。因此，首次在硅衬底上成功地生长了无位错的III-V-N层。即使在异质界面上也没有观察到丝位错和失配位错。生长了无位错的GaAsPN/GaPN量子阱结构和Si/GaPN/Si结构。Si/GaPn/Si结构是一种新型光电子集成电路的符号结构。GaPN层可以被用于光学或微波器件的层取代，而Si盖层被用于LSI。为了扩大器件的设计能力，需要增加氮的含量。在原子氢辐照下低温生长可获得7-10%的高氮含量。较少

III-V compound semiconductors were utilized for optoelectronic devices such as laser diodes and others and microwave devices such as high electron mobility transistors and others. They are key materials for communication and information terminals. On the other hand, a silicon (Si) semiconductor of a Ivth element has been widely used as LSIs for electronic systems including computers. If both semiconductors are combined as a single chip, novel devices could be developed.When the III-V compound semiconductor is grown on the Si substrate, a large number of crystalline defects, specifically dislocations were generated in spite of many researches. It is caused by the difference in the number of valence electrons, the large difference in lattice constants and of thermal expansion coefficients. Then, novel devices have not been developed. In this research work, we tried to grow dislocation-free III-V compound semiconductors on Si substrates by focusing on the mismatch of lattice constants and … More of thermal expansion coefficients since the problem caused by the difference of the number of valence electrons has been solved by us. Lattice matching was tried by growing III-V-N compound semiconductors of GaPN and GaAsPN on the Si substrate. A Si capping layer was expected to suppress the thermal strain introduced at a cooling stage after growth due to the difference in thermal expansion coefficients. As a result, the dislocation -free III-V-N layers were successfully grown on the Si substrate for the first time. Neither threading dislocations nor misfit dislocations were observed even at hetero-interfaces. A dislocation-free GaAsPN/GaPN quantum well structure and Si/GaPN/Si structure were also grown. The Si/GaPN/Si structure is a symbolic structure for novel optoelectronic integrated circuits. The GaPN layer can be replaced with a layer for optical or microwave device and the Si capping layer is utilized for LSIs. Thus, a basic technology was developed for novel optoelectronic integrated circuits.In order to expand the capability of device design, the increase of nitrogen contents is needed. High nitrogen contents of 7-10 % were achieved by low temperature growth under atomic hydrogen irradiation. Less