Control of Hydrogen in Si and its Application to Thin Film Transistor

我们研究了硅中的氢态，并开发了一种控制硅中的氢的方法，以使用于各种器件（如玻璃上的薄膜晶体管）的硅膜质量更好。本研究最重要的结果之一是，在晶体Si中，B受体比P给体更容易被氢原子钝化。实验结果表明，氢原子处理后，通过拉曼散射测量首次观察到几个与b相关的Si-H键中心，但未检测到与p相关的Si-H键。其次，通过对离子注入样品进行热退火后氢化硅中氢分子和Si- h的拉曼散射的测量，我们发现某些类型的多空位在600℃下是稳定的。根据理论计算，多重空缺的候选者为6个或10个。我们还研究了SIMS测量的H量与拉曼散射法测量的S-H键中心之间的相关性，包括不同程度的高密度氢。结果表明，拉曼散射测量是一种简单的方法，可以近似地估计氢的掺入量。然而，准分子激光退火得到的多晶化后，无法检测到Si- h，可能是由于激光退火在玻璃上产生的非晶硅表面粗糙度。

We have investigated hydrogen states in silicon and have developed a control method of hydrogen in Si for making the quality of Si films for various devices such as thin film transistors on glass much better. One of the most important results obtained in this study is that B acceptor is more easily passivated by hydrogen atom than P donors in crystalline Si. This was demonstrated by the experimental results that several B-related Si-H bonding centers were observed for me first time by Raman scattering measurements after hydrogen atom treatment, but no P-related Si-H bonds were detected. Secondly, we found that some kinds of multivacancies are stable up to 600 ℃ by measuring Raman scattering of hydrogen molecules and Si-H in hydrogenated Si after thermal annealing of ion implanted samples. According to theoretical calculations, the candidates of the multivacancies are 6 or 10 vacancies. We have also investigated the correlation between H amount measured by SIMS and S-H bonding centers done by Raman scattering method for amorphous Si including various levels of high density of hydrogen. It is found that Raman scattering measurement can be a simple method for estimating approximately the amount of incorporated hydrogen. However, it was impossible to detect Si-H after polycrystallization attained by excimer laser annealing, probably due to surface roughness produced by laser annealing of amorphous Si on glass.