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Dvelopment of Sn-Bi Based Low Temperature Solders which Enables Step Soldering

Dvelopment of Sn-Bi Based Low Temperature Solders which Enables Step Soldering
开发可阶梯焊接的 Sn-Bi 基低温焊料
批准号:
17560633
负责人:
UENISHI Keisuke
金额:
$2.3万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2006

项目摘要

项目成果

UENISHI Keisuke的其他基金

相关文献

中文摘要
翻译
添加Ag对Sn-Bi系钎料与Cu连接接头组织和性能的影响。在Sn-Bi合金中加入0.5mass%的Ag,通过Sn-Bi-Ag 3Sn三元共晶凝固,使共晶组织细化。随着共晶组织的减少,特别是在快速应力速度下,其塑性比Sn-Pb焊料的塑性增加更多。然而,添加超过1质量%的银,形成粗和单轴Ag 3Sn,这降低了焊料的延展性。采用熔点在410 K左右的Sn-Ag-Bi钎料,可以在433 K实现与Cu焊盘的低温回流焊。采用Sn-Bi-Ag钎料的Cu微连接具有与Sn-Ag-Cu钎料相当的抗拉强度和热循环疲劳性能。由于433 K低温焊接的优点,再流焊产生的残余应力变小,Cu焊盘与基板之间的断裂被大大抑制。对于采用Sn-Bi-Ag的接头,拉伸断裂发生在Cu 6Sn 5反应层与钎料的界面处。时效过程中接头强度的下降是由于反应层的生长造成的。动力学分析表明,反应层的生长行为与Sn-Ag-Cu焊料接头的生长行为基本相同。
英文摘要
Effect of Ag Addition to Sn-Bi Eutectic Solders on the Microstructure and Properties of Joints with Cu. About 0.5mass% of Ag addition to the Sn-Bi changes the eutectic microstructure fine through Sn-Bi-Ag3Sn ternary eutectic solidification. With decreasing the eutectic microstructure, the ductility increased more than that of Sn-Pb solders especially at the rapid stress speed. Addition of Ag more than 1 mass%, however, formed coarse and uniaxial Ag3Sn which decreased the ductility of solders. rand improved its ductility.By using Sn-Ag-Bi solders with low melting temperature about 410K, low temperature reflow soldering with Cu pad can be achieved at 433K. Microjoint with Cu using Sn-Bi-Ag solder exhibited the comparable tensile strength and thermal cycle fatigue property with that of Sn-Ag-Cu solders. Be the advantages of the low temperature soldering at 433K, residual stress caused by reflow soldering became smaller and fracture between Cu pad and substrate was drastically supressed. For the joints using Sn-Bi-Ag, fracture by tensile test occurs at the interface between Cu6Sn5 reaction layer and solder. The degradation of joint strength during the aging was caused by the growth of reaction layer. The growth behavior of reaction layer, however, was eastimated to be almost same as that for the joints using Sn-Ag-Cu solders by the kinetic analysis.
期刊论文(17)
专著(0)
科研奖励(0)
会议论文
Sn-Bi系はんだを用いた低温実装による基板への熱負荷低減効果
使用 Sn-Bi 焊料进行低温安装,减少电路板热负荷的效果
DOI: --
发表时间: 2007
期刊: Proc. 13th Sympo. on Micro joining and Assembly Technologies for Electronics Vol.13
影响因子: --
作者: [縄舟 秀美, 他50名(分担), 上西啓介]
通讯作者: 上西啓介
Effect of Low Temperature Soldering using Sn-Bi Based Solders on Depression of Thermal Stress in Substrates
使用 Sn-Bi 基焊料的低温焊接对降低基板热应力的影响
DOI: --
发表时间: 2007
期刊: Proc.13th Sympo.on Microjoining and Assembly Technologies in Electronics Vol.13
影响因子: --
作者: [縄舟 秀美, 他50名(分担), 上西啓介, Keisuke UENISHI]
通讯作者: Keisuke UENISHI
Joint property of packages prepared by low temperature soldering using Ag added Sn-Bi solders
添加Ag的Sn-Bi焊料低温焊接制备的封装的接合性能
DOI: --
发表时间: 2006
期刊: Proceedings of 16th Symposium on Micro Electronics (MES2006) Vol.16
影响因子: --
作者: [縄舟 秀美, 他50名(分担), 上西啓介, Keisuke UENISHI, 上西啓介, 鳥居久範, 小山晃弘, 中嶋清吾, 赤松俊也, Hisanori TORII]
通讯作者: Hisanori TORII
各種バリア金属材料とSn-Ag系はんだとの接合界面組織
各种阻挡金属材料与Sn-Ag焊料之间的键合界面结构
DOI: --
发表时间: 2006
期刊: Proc. 12th Sympo. on Microjoining and Assembly Technologies for Electronics Vol.12
影响因子: --
作者: [縄舟 秀美, 他50名(分担), 上西啓介, Keisuke UENISHI, 上西啓介, 鳥居久範, 小山晃弘, 中嶋清吾, 赤松俊也, Hisanori TORII, Akihiro OYAMA, Seigo NAKAJIMA, Toshiya AKAMATSU, 鳥居久範, 小山晃弘, 田中里英子]
通讯作者: 田中里英子
共 13 条
    Investugation of Electro-migration Behavior in Solder Joints
    • 批准号:
      22560722
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.5万
    • 财政年份:
      2010
    • 负责人:
      UENISHI Keisuke
    • 依托单位:
    Effect of Third Element Addition on Eutectic Microstructure of Lead Free Low Temperature Sn-Bi Based Solders
    • 批准号:
      19560728
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.0万
    • 财政年份:
      2007
    • 负责人:
      UENISHI Keisuke
    • 依托单位:
    Control of Interfacial Reaction in the Dissimilar Joints Using Shape Memory Alloy Thin Wires for the Fabrication of Medical Devices Inserted in Blood Vessel
    • 批准号:
      14550703
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.3万
    • 财政年份:
      2002
    • 负责人:
      UENISHI Keisuke
    • 依托单位: