electron beam lithography tool for 3D-nanoscale extremely high frequency components

3D纳米级结构是最先进的和未来的太赫兹范围的电子和光子极高频率组件的基础。除了“内置于”外延半导体生长工艺中的原子精度外，还需要正交光刻结构工艺来最小化纳米级器件的临界面积和体积，特别是抑制寄生电容和降低接入电阻。这不仅适用于基于外延层沉积的传统器件拓扑结构，也适用于新型外延结构，如纳米线和基于2d材料的器件。例如，需要定义纳米级电极，以及纳米级的放置精度。UDE的“高频电子元件（BHE）”部门研究纳米级半导体材料和工艺，以实现“超过fmax”的太赫兹器件，在SFB/TRR 196 MARIE的其他项目中得到资助。重点是开发具有最高电子迁移率的半导体材料，特别是磷化铟和相关材料，以及在该部门的洁净室设施中使用这些材料制造的晶体管和射频二极管。由于生长和结构在研究过程中是紧密耦合的，因此需要在自己的设施中安装高性能纳米光刻机，以达到当前和未来的研究目标。选择的方法是电子束光刻（EBL）。商用EBL工具具有所需的< 10纳米分辨率和低于10纳米的放置精度。高度重要的是在EBL中可用的大聚焦深度，它允许处理预结构和不规则高度的形状。当选择100 keV的电子能量时，即使对于磷化铟等具有较高后向散射的材料，也可以很好地纠正接近误差。杜伊斯堡的另外五个研究小组已经表达了对工程学院和物理学院的这种光刻仪器的需求，每个小组都在纳米尺度上研究最先进的课题，具有重要的前景。五个研究小组参与了这项提案。因此，期望在获得高分辨率EBL工具方面具有高协同效应。所要求的工具应安装在UDE半导体技术中心的洁净室设施中，该设施特别适合高分辨率光刻（具有非常低的建筑振动，优化的气流和低电磁场）。

3D nanoscale structures are at the foundation of state-of-the-art and future electronic and photonic extremely high frequency components for the terahertz range. Besides the atomic precision "built into" epitaxial semiconductor growth processes, an orthogonal lithographic structuring process is required to minimize critical areas and volumes in nanoscale devices, in particular to suppress parasitic capacitance and to reduce access resistance. This holds true for traditional device topologies based on epitaxial layer deposition, but also for novel epitaxial structures such as nanowires an devices based on 2D-materials. The definition of e.g. nanoscale electrodes is needed, along with nanometer-scale placement accuracy. The department "Components for High Frequence Electronics (BHE)" at UDE researches nanoscale semiconductor materials and processes to realize "beyond-fmax" Terahertz devices, funded among other programs through the SFB/TRR 196 MARIE. The focus is on own semiconductor material development with highest electron mobility, in particular indium phosphide and related materials, and on transistors and RF diodes built from these materials in the department's cleanroom facility. Since the growth and structuring is tightly coupled in the research process, the installation of a high performance nanoscale lithography in the own facility is needed to reach the current and future research goals. The method of choice is electron beam lithography (EBL). Commercially available EBL tools exhibit the required < 10 nm resolution combined with a placement accuracy below 10 nm. Of high importance is the large depth of focus which is available in EBL, which allows for the processing of pre-structured and shapes of irregular height. When opting for 100 keV electron energy, the proximity error can be well corrected even for materials such as indium phosphide which exhibit relatively high backscattering. Five additional research groups in Duisburg have expressed a need for this lithographic instrument within the faculty of engineering and the faculty of physics, each researching state-of-the-art topics on the nanoscale with significant horizon. The five research groups take part in this proposal. A high synergetic effect in procuring a high-resolution EBL tool is therefore expected. The requested tool shall be installed in the cleanroom facility of UDE's Center for Semiconductor Technology, in a location particularly suited for high resolution lithography (with very low building vibrations, optimized airflow and low electromagnetic fields).