Comprehensive Observation of Interface dipoles at Insulator Semiconductor Interface

为了阐明介面偶极子和半导体介面偶极子产生的原因，对稀土氧化物MOS电容器的平带电压进行了表征。提出了一个模型来再现厚度相关的平带电压漂移。氧化物中硅原子的组成对界面偶极子的大小影响不大。通过稀土氧化物堆积法或工艺法在界面处提供氧原子，可使平面带电压发生位移，表明界面偶极子的主要来源是硅酸盐反应过程中的氧缺陷。

To elucidate the origin of interface dipoles presented at dielectric and semiconductor interface, flatband voltages of MOS capacitors with rare earth oxides have been characterized. A model to reproduce the thickness dependent flatband voltage shift has been proposed. The composition of Si atoms in oxides rarely affects the magnitude of interface dipole. Oxygen atom supply at the interface, either by rare earth oxide stacking or by process, can shift the flatband voltage, suggesting that the main origin of interface dipole is due to oxygen defect during silicate reaction.