Studies on preparation of transparent conductive oxide thin films by sol-gel method

采用溶胶-凝胶法在熔融石英衬底上制备了厚度为140 nm的Sn掺杂In_2O_3和Sb掺杂SnO_2薄膜。这些薄膜的透射率在可见光区为90%。在55 ℃以上焙烧30 min，薄膜与石英基体之间没有相互作用，在350 ℃以上焙烧时，薄膜中OH基团脱水，薄膜结晶。当<-3>Sn含量为7mol%，850 ℃下保温30 min时，薄膜的电阻率达到最小值（3 × 10 ~（-1）Ω·cm）。在300 ℃真空退火30 min后，电阻率下降到7 × 10 <-4>~ 4 Ω·cm。SnO_2薄膜在550 ℃以上逐渐结晶，OH基团在焙烧过程中脱水。随着烧成温度的升高，薄膜中初级颗粒的晶粒生长不断进行，孔隙率也没有任何实质性变化。当<-3>Sb含量为7.5mol%，800 ℃保温30 min时，薄膜的电阻率达到最小值（3 × 10 ~ 4 Ω·cm）。

Sn-doped In_2O_3 and Sb-doped SnO_2 thin films with 140 nm in thickness prepared on fused silica substrates by a sol-gel method. The transmittance of these films was 90% in the visible region. The interaction between the film and a fused silica substrate was not recognized by firing above 55ﾟC for 30minutes.In_2O_3 thin films crystallized above 350ﾟC, after OH groups were dehydrated during the firing. The minimum resistivity (3X10^<-3>OMEGAcm) was attained for the film with 7mol%Sn prepared at 850ﾟC for 30 minutes. After the film was annealed at 300ﾟC for 30 minutes in vacuum, the resistivity of the film decreased to 7X10^<-4>OMEGAcm.SnO_2 thin films progressively crystallized above 550ﾟC, after OH groups were dehydrated during the firing. Grain growth of primary particles in the films proceeded with raising up firing temprature and also without any substantial change in the porosity. The minimum resistivity (3X10^<-3>OMEGAcm) was attained for the film with 7.5mol%Sb prepared at 800ﾟC for 30 minutes.