Defect reactions in semiconductors under electronic excitation condition studied by in-stu optical spectroscopy in a transmission electron microscope.

利用透射电子显微镜的阴极发光（CL）和光致发光（PL）光谱，系统地研究了电子激发条件下CuPt-ordered GaInP中的点缺陷反应。在120 keV以上的能量范围内，电子辐照会使发光强度降低。从发光强度随电子剂量的变化率分析，我们已经表明，这种下降是由于电子辐照在Ga和In亚晶格上产生的frenkel型缺陷，并且估计Ga和In原子位移的阈值选择能分别为145和120 keV。在Ga和In亚晶格上形成frenkel型缺陷导致原子有序度的降低，我们用原位光谱定量研究了原子有序度的降低。我们提出：1)在2x10^<20> cm^<-2>以下的剂量范围内，电子辐照诱导的基团-i （Ga和In）空位的迁移主导了无序性；2)在5x10^<21> cm^<-2>以上的剂量范围内，基团- hi空位和间隙的自发重组主导了无序性。我们首先观察到重组增强了（Ga, in）P中基团空位的迁移，本实验数据可能有助于对电子辐照下点缺陷反应的一般理解。本研究为电子辐照下Ga-空位和in -空位的生成和迁移提供了额外的实验数据。原位光谱法是研究电子辐照下缺陷反应的有效方法。

We have systematically investigated point-defects-reactions in CuPt-ordered GaInP under an electronic excitation condition by means of cathodoluminescence (CL) and photoluminescence (PL) spectroscopy in a transmission electron microscope.A decrease of luminescence intensity by an electron-irradiation in the energy range above 120 keV has been observed. From an analysis of the variation rate of the luminescence intensity vs. electron dose, we have shown that the decrease is due to the Frenkel-type defects on the Ga and In sublattices generated by electron-irradiation, and the threshold election energies for the displacement of Ga and In atoms have been estimated to be 145 and 120 keV, respectively. Formation of the Frenkel-type defects on both the Ga land In sublattices results in the decrease of the degree of atomic ordering, and we have quantitatively studied the decrease by in-situ optical spectroscopy. We have proposed that 1) an electron-irradiation-induced migration of group-Ill (Ga and In) vacancies dominates the disordering in the dose range below 2x10^<20> cm^<-2>, and 2) spontaneous recombinations of a group-HI vacancy and an interstitial dominate the disordering in the dose range above 5x10^<21> cm^<-2>. We could first observe the recombination-enhanced migration of the group-Ill vacancies in (Ga, In)P, and the present experimental data may be useful for a general understanding of point-defect-reactions under electron-irradiation.This study has provided additional experimental data about the generation and migration of Ga- and In-vacancies under electron-irradiation. in-situ optical spectroscopy in a TEM method is useful to study defect-reactions under electron-irradiation.