Developement of new hydrogen analysis method by combining classical methods and its application to the H/Si systems

我们已经报道了在氢终止的Si表面上的金属薄膜的外延生长模式与在清洁的Si表面上的略有不同。本课题是在国家科学研究基金资助下开展的一项研究工作，目的是将传统的氢分析方法结合起来，发展一种新的氢分析技术，并应用于真实的氢硅体系。新的调查结果如下。(1)结合低能电子衍射（LEED）和低能离子散射（ISS），利用反冲探测系统对氢的绝对体积进行探测，是研究氢致外延的有力工具。我们还使用STM的表面形貌的异位观察。(2)采用分子束外延和溅射两种方法在硅衬底上制备金属外延薄膜，研究氢对薄膜的影响。(3)特定材料如Ag、Pb和In诱导的二维超晶格的初始阶段在氢终止后转变为三维本征团簇生长，这些结果为更好地理解氢终止对异质外延的改性提供了关键。

We have reported that epitaxial growth mode of thin metallic films on the Hydrogen-terminated Si surfaces were slightly different from that on the clean Si surfaces. Our subject on this research project supported by a Grant-in-Aid for Scientific Research is to develop a new hydrogen analysis technique by combined the classical methods and apply to the real hydrogen-silicon systems. The new findings are as follows.(1) Combining the low energy electron diffraction (LEED) and the low energy ion scattering (ISS) containing detection of the absolute volume of hydrogen using the recoil detection system causes the powerful tool to investigate the hydrogen induced epitaxy. We also used the STM for the ex-situ observation of surface morphology.(2) Not only MBE methods but also sputtering methods were applied to make metal epitaxial films on Si substrates to investigate the role of hydrogen on the films.(3) Initial stage of 2-dimensional superlattice induced by specific materials such as Ag, Pb and In changes to 3-dimensional intrinsic cluster growth after the Hydrogen termination.These results cause the key of better understanding of modification of heteroepitaxy by the Hydrogen termination.