Study for adhesion analysis of resist pattern of 0.1μm line-width by using atomic force microscope tip

在21世纪，微纳加工技术已成为实现高密度存储和液晶显示等电子微器件的重要技术。特别是在光刻工艺中，光刻胶被认为是干法或湿法刻蚀工艺的重要掩模材料。然而，提高抗蚀剂微图形的附着力已被认为是一个亟待解决的严重问题，因为在图形显影过程中，由于拉普拉斯力的影响，在水冲洗过程中会发生图形崩溃。近年来，许多研究者对光致抗蚀剂材料的粘接现象进行了各种研究。在胶粘剂性能的监测上已经做了大量的工作。然而，似乎缺乏的是定量和直接的物理分析。同时，随着原子力显微镜(Afm)的发明，我们已经及时配备了适当的工具来理解物理PRO…更多纳米尺度的凝聚态物质。如上所述，随着微电子技术小型化程度的提高，我们无疑要面对100纳米以下的物质结构。在这方面，研究者已经提出了直接分析抗蚀剂图形附着的新原理，即用原子力显微镜针尖直接剥离(DPAT)。在这项研究中，通过这种方法，显示了抗蚀剂微图案崩溃的负载与加热温度和线宽的关系。了解这些崩塌特性不仅对发展微电子器件，而且对发展纳米尺度的器件都具有重要意义。此外，用DPAT方法对KrF准分子激光光刻形成的100 nm宽的抗蚀剂线条图形的崩塌和断裂机理进行了表征。重点研究了加载位置对纸样崩塌和断裂机理的影响。本研究中的DPAT方法可以应用于宽度小于70 nm的ArF抗蚀剂图案、电子束和同步辐射抗蚀剂图案。此外，该技术还将为其他领域提供有用的信息，如微粒的凝聚控制和微机械的结构设计等。较少

In the 21^<st> century, micro and nanofabrication technique has become important to realize electronic micro devices such as high density memory and liquid crystal display. In the lithography process, particularly, photoresist is regarded as an important mask material for dry or wet etching processes. However, improvement of the adhesion strength of the resist micropattern has been recognized as one serious problem to be solved, because the pattern collapse during water rinsing in the pattern development process occurs drastically due to Laplace force. In these days, various studies on adhesive phenomena of photoresist material have been accomplished by several researchers. A great deal of effort has been made on monitoring the adhesive property. What seems to be lacking, however, is quantitative and direct analysis physically. Meanwhile, with the invention of the atomic force microscope (AFM), we have been equipped in good time with the appropriate tools to understand the physical pro … More perties of condensed matter on a nanometer scale. As mentioned above, with the increasing degree of miniaturization in microelectronics, we unquestionably become confronted with structures of matter on a scale below 100 nm. In this regard, the investigator has already proposed the novel principle for direct analysis method for resist pattern adhesion, that is, direct peeling with the AFM tip (DPAT). In this study, by this method, the dependency of the load for collapse of the resist micropattern on heating temperature and linewidth are shown. Understanding these collapse property is of crucial importance for development not only microelectronic device but device in nanometer scale. Moreover, collapse and fracture mechanism of the resist line-pattern of 100 nm width formed by the KrF-excimer laser lithography are characterized by the DPAT method. Particularly, loading position dependency of pattern collapse and fracture mechanism are mainly focused. The DPAT method in this study can be applied to an ArF resist pattern, electron beam and synchrotron radiation resist patterns less than 70nm in width. Moreover, this technique will give useful information to other fields, for example, condensation control of micro particles and structural design for micro machine and so on. Less