Study of Direct Observation of Electron Wave Phenomena in Solid State by Scanning Hot Electron Microscopy

研究了扫描热电子显微镜（SHEM）观察电子波衍射的方法。在这项研究之前，已经检测到来自绝缘体/金属发射体的相对高能量（3至4 eV）的热电子。我们的最终目标是观察从半导体发射极发射的低能（30 - 300 meV）热电子。因此，SHEM技术的建立、半导体发射极的实现以及半导体中相对高能（3eV）超热电子的探测是本研究的目标。选择3eV而不是300 meV的原因是为了避免样品表面上低功函数金属的必要性。结果表明：（1）对SHEM有了全面的认识。使用球/平面模型，jelium模型-和图像-力势，热和热平衡电子流流过探针，和它们的比例与参数的关系被揭示。（2）寄生效应，包括 ...更多信息 消除了电容耦合电流、残余串联电阻感应电流、差距控制系统引起的相移和响应抑制。（3）设计并制备了AlAs/GaInAs热电子发射极。获得了3eV的热电子发射。（4）利用该发射极，通过消除寄生效应，进行了半导体发射极超热电子的探测实验。对实测数据进行了全面的分析，并与未发现超热电子的理论进行了比较。我们得出结论，3eV的热电子不能在半导体中传输超过100 nm的效率足够高的探针检测。综上所述，我们建立了SHEM技术和半导体发射极的热电子产生。在此基础上，我们认为应该进行到最后阶段，即以低能热电子为研究对象，从而为避免使用低功函数的金属材料提供了一个突破性的成像思路。少

Scanning hot electron microscopy(SHEM) for the observation of the electron wave diffraction has been studied. Before this study, hot electrons of relatively high energy (3 to 4eV) from insulator/metal emitters were already detected. Our final target is to observe the hot electron of low energy(30 to 300meV) from the semiconductor emitter. Thus, the establishment of SHEM technique, the realization of the semiconductor emitter, and the detection of the hot electron of relative high energy(3eV) in semiconductor, were set as targets of this study. The reason for the choice of 3eV rather than 300meV is to avoid the necessity of the low work function metal on the sample surface. As results, (1)The comprehensive understanding of SHEM was achieved. Using the sphere/plane model, the jelium-model- and the image- force-potentials, the hot and the thermal-equilibrium electron currents flown through the probe, and their ratio were revealed in relation with parameters. (2)Parasitic effects including … More of the capacitive coupling current, the residual series resistance induced current, the phase-shift and response suppression induced by the gap control system, have been made clear to be eliminated. (3)AlAs/GaInAs hot electron emitters were designed and fabricated. The hot electron emission at 3eV was achieved. (4)Using the emitter and eliminating of parasitic effects, detection experiments of the hot electron from the semiconductor emitter have been executed. Measured data have been investigated comprehensively by comparing with the theory not to indicate the hot electron detection. We concluded that the 3eV hot electron could not be transported over 100nm in the semiconductor at the efficiency enough high for the probe detection. Summarizing the above, we have established SHEM technique and the hot electron generation by the semiconductor emitter. Based on these, we have convinced that we should proceed to the final stage where the object is the low energy hot electron. A breakthrough idea for imaging has been got to avoid the use of the low work function metal. Less