Basic research on semiconductor materials and devices
Basic research on semiconductor materials and devices
批准号:
04045023
负责人:
FURUYA Kazuhito
金额:
$3.46万
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1992
资助国家:
日本
项目状态:
已结题
起止时间:
1992 至 1994
中文摘要
点击翻译按钮获取中文摘要
英文摘要
From 22 June 1994 to 26 June, we invited two researchers from Korea to Tokyo Institute of Technology. At Ultrafast Electronics Research Building in Tokyo Institute of Technology, researchers from Korea and Japan had meetings to discuss on the ultrafast electronics, the optoelectronics, and the advanced process techniques. During their stay in Japan, Korean and Japanese researchers attended the Solid State Devices and Materials Conference to discuss on latest research topics and trend and the direction of our research cooperation.From 24 November 1994 to 27 November, one researcher visited the Semiconductor Physics Research Center of Jeonbuk University in Korea from Tokyo Institute of Technology to present an invited talk at the Symposium of Semiconductor Physics on Korea. Researchers from Japan and Korea discussed on quantum effect physics and device application. He also visited research facilities in the Center.From 26 January 1995 to 27 January, two Korean researchers visited Tokyo Institute of Technology from Jeonbuk University to discuss on quantum effect physics and its device application. Japanese researcher explained about the system of the Quantum Effect Electronics Research Center newly opened in June 1995 at Tokyo Institute of Technology.Owing to the above international activity on the research, we have started to cooperate on the research of semiconductor physics, materials and its device applications.
期刊论文(47)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Hyung-Jae Lee: "Formation mechanism and pore size control of light emitting porous silicon" Jpn.J.Appl.Phys.33. 6425- (1994)
Hyung-Jae Lee:“发光多孔硅的形成机制和孔径控制”Jpn.J.Appl.Phys.33。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Jae-Myung Seo: "Existence of metastable molecular precursors to dissociative oxygen chemisorption Si(111) and Si (100) at 40 K" J.of Vac.Sci.& Tech.A. 12. 2255- (1994)
Jae-Myung Seo:“40 K 下解离氧化学吸附 Si(111) 和 Si (100) 的亚稳态分子前体的存在”J.of Vac.Sci。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Kenichi Iga: "Two-dimensional multiwavelength surface emitting laser arrays fabricated by nonplanal MOCVD" Electron.,Lett.30. 1947-1948 (1994)
Kenichi Iga:“通过非平面 MOCVD 制造的二维多波长表面发射激光阵列”Electron.,Lett.30。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Hyung-Jae Lee: "Interfacial layer formation of the CdTe/InSb heterointerfaces grown by temparature gradient vapor transport depositon" Appl.Phys.Lett.65. 2597-2599 (1994)
Hyung-Jae Lee:“通过温度梯度气相传输沉积生长的 CdTe/InSb 异质界面的界面层形成”Appl.Phys.Lett.65。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Kazuhito Furuya: "Analysis of phase breaking effect in resonant tunneling diodes using correlation function" Jpn.J.Appl.Phys.33. 2511-2512 (1994)
Kazuhito Furuya:“使用相关函数分析谐振隧道二极管的断相效应”Jpn.J.Appl.Phys.33。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 38 条
Observation of Electron-Wave Diffraction with Scanning Probe based on Reciprocity Principle
-
批准号:15360184
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.83万
-
财政年份:2003
-
负责人:FURUYA Kazuhito
-
依托单位:
Quantum Interference Devices Controlled by Metals Buried in Semiconductors
-
批准号:11694136
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$3.33万
-
财政年份:1999
-
负责人:FURUYA Kazuhito
-
依托单位:
Study of Direct Observation of Electron Wave Phenomena in Solid State by Scanning Hot Electron Microscopy
-
批准号:11355013
-
项目类别:Grant-in-Aid for Scientific Research (A).
-
资助金额:$11.26万
-
财政年份:1999
-
负责人:FURUYA Kazuhito
-
依托单位:
Electron Wave Interference in Semiconductor Biprism of Tungsten Wire for Lateral Coherence Estimation
-
批准号:10305024
-
项目类别:Grant-in-Aid for Scientific Research (A).
-
资助金额:$16.58万
-
财政年份:1998
-
负责人:FURUYA Kazuhito
-
依托单位:
New STM technique for observation of ballistic electrons in semiconductors
-
批准号:08405023
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$16.26万
-
财政年份:1996
-
负责人:FURUYA Kazuhito
-
依托单位:
Basic study of coherent hot electron generation and its application for ultrafast devices
-
批准号:05402040
-
项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$8.83万
-
财政年份:1993
-
负责人:FURUYA Kazuhito
-
依托单位:
Basic Study of Ultra-High Speed Electron wave Device Using Hot-Electron Transport in Lateral Superlattice
-
批准号:01420025
-
项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$7.3万
-
财政年份:1989
-
负责人:FURUYA Kazuhito
-
依托单位:
Study on Fabrication Technology of GaInAs/InP Device with Ultrafine Structure
-
批准号:63850077
-
项目类别:Grant-in-Aid for Developmental Scientific Research
-
资助金额:$8.58万
-
财政年份:1988
-
负责人:FURUYA Kazuhito
-
依托单位:
Basic Research of GaInAs Ultrafast Transistor Using Diffraction of Ballistic Electron
-
批准号:62460133
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$3.14万
-
财政年份:1987
-
负责人:FURUYA Kazuhito
-
依托单位:
"Basic study on very-fast GaInAs transistor and integrated long-wavelength laser"
-
批准号:60550274
-
项目类别:Grant-in-Aid for General Scientific Research (C)
-
资助金额:$1.34万
-
财政年份:1985
-
负责人:FURUYA Kazuhito
-
依托单位:
海外基金